IKW25N120T2FKSA1 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 349W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 349W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
| Anzahl | Preis |
|---|---|
| 12+ | 6.11 EUR |
| 14+ | 5.18 EUR |
| 20+ | 4.62 EUR |
| 30+ | 4.56 EUR |
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Technische Details IKW25N120T2FKSA1 INFINEON TECHNOLOGIES
Description: IGBT TRENCH 1200V 50A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 195 ns, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A, Supplier Device Package: PG-TO247-3-1, IGBT Type: Trench, Td (on/off) @ 25°C: 27ns/265ns, Switching Energy: 2.9mJ, Test Condition: 600V, 25A, 16.4Ohm, 15V, Gate Charge: 120 nC, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 100 A, Power - Max: 349 W.
Weitere Produktangebote IKW25N120T2FKSA1 nach Preis ab 5.07 EUR bis 12.41 EUR
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IKW25N120T2FKSA1 | Infineon |
Transistor IGBT ; 1200V; 20V; 50A; 100A; 349W; 5,2V~6,4V; 120nC; -40°C~175°C; IKW25N120T2 TIKW25n120t2Anzahl je Verpackung: 5 Stücke |
auf Bestellung 6 Stücke: Lieferzeit 7-14 Tag (e) |
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IKW25N120T2FKSA1 | Infineon Technologies |
Description: IGBT TRENCH 1200V 50A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 195 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A Supplier Device Package: PG-TO247-3-1 IGBT Type: Trench Td (on/off) @ 25°C: 27ns/265ns Switching Energy: 2.9mJ Test Condition: 600V, 25A, 16.4Ohm, 15V Gate Charge: 120 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 100 A Power - Max: 349 W |
auf Bestellung 879 Stücke: Lieferzeit 10-14 Tag (e) |
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| IKW25N120T2FKSA1 |
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Hersteller: Infineon
Transistor IGBT ; 1200V; 20V; 50A; 100A; 349W; 5,2V~6,4V; 120nC; -40°C~175°C; IKW25N120T2 TIKW25n120t2
Anzahl je Verpackung: 5 Stücke
Transistor IGBT ; 1200V; 20V; 50A; 100A; 349W; 5,2V~6,4V; 120nC; -40°C~175°C; IKW25N120T2 TIKW25n120t2
Anzahl je Verpackung: 5 Stücke
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 12.19 EUR |
| IKW25N120T2FKSA1 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH 1200V 50A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 195 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench
Td (on/off) @ 25°C: 27ns/265ns
Switching Energy: 2.9mJ
Test Condition: 600V, 25A, 16.4Ohm, 15V
Gate Charge: 120 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 349 W
Description: IGBT TRENCH 1200V 50A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 195 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench
Td (on/off) @ 25°C: 27ns/265ns
Switching Energy: 2.9mJ
Test Condition: 600V, 25A, 16.4Ohm, 15V
Gate Charge: 120 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 349 W
auf Bestellung 879 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 12.41 EUR |
| 30+ | 7.1 EUR |
| 120+ | 5.93 EUR |
| 510+ | 5.07 EUR |


