IKW25N120T2FKSA1 Infineon Technologies
Hersteller: Infineon Technologies
Trans IGBT Chip N-CH 1200V 50A 349W Automotive 3-Pin(3+Tab) TO-247 Tube
| Anzahl | Privatkunde |
|---|---|
| 59+ | 3.06 EUR |
| 60+ | 2.95 EUR |
| 62+ | 2.81 EUR |
| 63+ | 2.69 EUR |
| 100+ | 2.62 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
14-21 Tag (e)
Mindestmenge:
59 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details IKW25N120T2FKSA1 Infineon Technologies
Description: IGBT TRENCH 1200V 50A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 195 ns, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A, Supplier Device Package: PG-TO247-3-1, IGBT Type: Trench, Td (on/off) @ 25°C: 27ns/265ns, Switching Energy: 2.9mJ, Test Condition: 600V, 25A, 16.4Ohm, 15V, Gate Charge: 120 nC, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 100 A, Power - Max: 349 W.
Weitere Produktangebote IKW25N120T2FKSA1 nach Preis ab 5.28 EUR bis 12.95 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IKW25N120T2FKSA1 | Infineon Technologies |
Description: IGBT TRENCH 1200V 50A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 195 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A Supplier Device Package: PG-TO247-3-1 IGBT Type: Trench Td (on/off) @ 25°C: 27ns/265ns Switching Energy: 2.9mJ Test Condition: 600V, 25A, 16.4Ohm, 15V Gate Charge: 120 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 100 A Power - Max: 349 W |
auf Bestellung 731 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||
 |
IKW25N120T2FKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 50A; 349W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 50A Power dissipation: 349W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 100A Mounting: THT Gate charge: 0.12µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
|
|
IKW25N120T2FKSA1 | Infineon Technologies |
Trans IGBT Chip N-CH 1200V 50A 349W Automotive 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 183 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IKW25N120T2FKSA1 |
|
Hersteller: Infineon Technologies
Description: IGBT TRENCH 1200V 50A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 195 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench
Td (on/off) @ 25°C: 27ns/265ns
Switching Energy: 2.9mJ
Test Condition: 600V, 25A, 16.4Ohm, 15V
Gate Charge: 120 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 349 W
Description: IGBT TRENCH 1200V 50A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 195 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench
Td (on/off) @ 25°C: 27ns/265ns
Switching Energy: 2.9mJ
Test Condition: 600V, 25A, 16.4Ohm, 15V
Gate Charge: 120 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 349 W
auf Bestellung 731 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 12.95 EUR |
| 30+ | 7.4 EUR |
| 120+ | 6.18 EUR |
| 510+ | 5.28 EUR |
| IKW25N120T2FKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 349W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 349W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 349W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 349W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
| IKW25N120T2FKSA1 |
|
Hersteller: Infineon Technologies
Trans IGBT Chip N-CH 1200V 50A 349W Automotive 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 1200V 50A 349W Automotive 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 183 Stücke:
Lieferzeit 14-21 Tag (e)