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| Anzahl | Preis |
|---|---|
| 1+ | 10.38 EUR |
| 10+ | 8.91 EUR |
| 25+ | 8.08 EUR |
| 100+ | 7.41 EUR |
| 240+ | 6.97 EUR |
| 480+ | 6.53 EUR |
| 1200+ | 6.18 EUR |
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Technische Details IKW25T120 Infineon Technologies
Description: IKW25T120 - DISCRETE IGBT WITH A, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 200 ns, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A, Supplier Device Package: PG-TO247-3-21, IGBT Type: NPT, Trench Field Stop, Td (on/off) @ 25°C: 50ns/560ns, Switching Energy: 2mJ (on), 2.2mJ (off), Test Condition: 600V, 25A, 22Ohm, 15V, Gate Charge: 155 nC, Part Status: Active, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 75 A, Power - Max: 190 W.
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IKW25T120 Produktcode: 175269
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 Transistoren > Transistoren IGBT, Leistungsmodule |
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IKW25T120 | Hersteller : Infineon Technologies |
Description: IKW25T120 - DISCRETE IGBT WITH A Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 200 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A Supplier Device Package: PG-TO247-3-21 IGBT Type: NPT, Trench Field Stop Td (on/off) @ 25°C: 50ns/560ns Switching Energy: 2mJ (on), 2.2mJ (off) Test Condition: 600V, 25A, 22Ohm, 15V Gate Charge: 155 nC Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 75 A Power - Max: 190 W |
Produkt ist nicht verfügbar |