IKW30N65EL5XKSA1 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 62A; 114W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 62A
Power dissipation: 114W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 168nC
Kind of package: tube
Turn-on time: 44ns
Turn-off time: 359ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 62A; 114W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 62A
Power dissipation: 114W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 168nC
Kind of package: tube
Turn-on time: 44ns
Turn-off time: 359ns
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
10+ | 7.45 EUR |
13+ | 5.71 EUR |
14+ | 5.39 EUR |
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Technische Details IKW30N65EL5XKSA1 INFINEON TECHNOLOGIES
Description: IGBT 650V 85A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 100 ns, Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 30A, Supplier Device Package: PG-TO247-3, Td (on/off) @ 25°C: 33ns/308ns, Switching Energy: 470µJ (on), 1.35mJ (off), Test Condition: 400V, 30A, 10Ohm, 15V, Gate Charge: 168 nC, Part Status: Active, Current - Collector (Ic) (Max): 85 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 227 W.
Weitere Produktangebote IKW30N65EL5XKSA1 nach Preis ab 3.8 EUR bis 10.02 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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IKW30N65EL5XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 62A; 114W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 62A Power dissipation: 114W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 168nC Kind of package: tube Turn-on time: 44ns Turn-off time: 359ns Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 16 Stücke: Lieferzeit 7-14 Tag (e) |
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IKW30N65EL5XKSA1 | Hersteller : Infineon Technologies | IGBT Transistors 650V IGBT Trenchstop 5 |
auf Bestellung 3080 Stücke: Lieferzeit 10-14 Tag (e) |
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IKW30N65EL5XKSA1 | Hersteller : Infineon Technologies |
Description: IGBT 650V 85A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 100 ns Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 30A Supplier Device Package: PG-TO247-3 Td (on/off) @ 25°C: 33ns/308ns Switching Energy: 470µJ (on), 1.35mJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 168 nC Part Status: Active Current - Collector (Ic) (Max): 85 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 227 W |
auf Bestellung 86 Stücke: Lieferzeit 10-14 Tag (e) |
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IKW30N65EL5XKSA1 | Hersteller : Infineon Technologies | Trans IGBT Chip N-CH 650V 85A 227W 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 570 Stücke: Lieferzeit 14-21 Tag (e) |
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IKW30N65EL5XKSA1 | Hersteller : INFINEON |
Description: INFINEON - IKW30N65EL5XKSA1 - IGBT, 85 A, 1.05 V, 227 W, 650 V, TO-247, 3 Pin(s) tariffCode: 85412900 productTraceability: Yes-Date/Lot Code Kollektor-Emitter-Spannung, max.: 650V rohsCompliant: YES Verlustleistung: 227W Anzahl der Pins: 3Pin(s) euEccn: NLR Kontinuierlicher Kollektorstrom: 85A hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.05V Betriebstemperatur, max.: 175°C usEccn: EAR99 |
auf Bestellung 1176 Stücke: Lieferzeit 14-21 Tag (e) |
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IKW30N65EL5XKSA1 | Hersteller : Infineon Technologies | Trans IGBT Chip N-CH 650V 85A 227000mW 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 213 Stücke: Lieferzeit 14-21 Tag (e) |
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IKW30N65EL5XKSA1 | Hersteller : Infineon Technologies | Trans IGBT Chip N-CH 650V 85A 227W 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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IKW30N65EL5XKSA1 | Hersteller : Infineon Technologies | Trans IGBT Chip N-CH 650V 85A 227W 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |