IKW40N65F5FKSA1 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIESCategory: THT IGBT transistors
Description: Transistor: IGBT; 650V; 74A; 250W; TO247-3; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 74A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: F5
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 18 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 11+ | 6.76 EUR |
| 12+ | 6.09 EUR |
| 16+ | 4.66 EUR |
| 17+ | 4.4 EUR |
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Technische Details IKW40N65F5FKSA1 INFINEON TECHNOLOGIES
Description: IGBT 650V 74A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 60 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A, Supplier Device Package: PG-TO247-3, Td (on/off) @ 25°C: 19ns/160ns, Switching Energy: 360µJ (on), 100µJ (off), Test Condition: 400V, 20A, 15Ohm, 15V, Gate Charge: 95 nC, Part Status: Active, Current - Collector (Ic) (Max): 74 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 255 W.
Weitere Produktangebote IKW40N65F5FKSA1 nach Preis ab 3.61 EUR bis 9.65 EUR
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IKW40N65F5FKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 74A; 250W; TO247-3; F5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 74A Power dissipation: 250W Case: TO247-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Manufacturer series: F5 Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 18 Stücke: Lieferzeit 14-21 Tag (e) |
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IKW40N65F5FKSA1 | Hersteller : Infineon Technologies |
Description: IGBT 650V 74A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 60 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Supplier Device Package: PG-TO247-3 Td (on/off) @ 25°C: 19ns/160ns Switching Energy: 360µJ (on), 100µJ (off) Test Condition: 400V, 20A, 15Ohm, 15V Gate Charge: 95 nC Part Status: Active Current - Collector (Ic) (Max): 74 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 255 W |
auf Bestellung 1722 Stücke: Lieferzeit 10-14 Tag (e) |
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IKW40N65F5FKSA1 | Hersteller : Infineon Technologies |
IGBT Transistors IGBT PRODUCTS |
auf Bestellung 247 Stücke: Lieferzeit 14-28 Tag (e) |
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IKW40N65F5FKSA1 | Hersteller : Infineon Technologies |
Trans IGBT Chip N-CH 650V 74A 255000mW 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 2196 Stücke: Lieferzeit 14-21 Tag (e) |
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IKW40N65F5FKSA1 | Hersteller : INFINEON |
Description: INFINEON - IKW40N65F5FKSA1 - IGBT, 40 A, 1.6 V, 255 W, 650 V, TO-247, 3 Pin(s) tariffCode: 85412900 productTraceability: Yes-Date/Lot Code Kollektor-Emitter-Spannung, max.: 650V rohsCompliant: YES Verlustleistung: 255W Anzahl der Pins: 3Pin(s) euEccn: NLR Kontinuierlicher Kollektorstrom: 40A hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.6V Betriebstemperatur, max.: 175°C usEccn: EAR99 |
auf Bestellung 169 Stücke: Lieferzeit 14-21 Tag (e) |