Technische Details IKW50N60DTP Infineon
Category: THT IGBT transistors, Description: Transistor: IGBT; 600V; 61A; 159.6W; TO247-3, Type of transistor: IGBT, Collector-emitter voltage: 600V, Collector current: 61A, Power dissipation: 159.6W, Case: TO247-3, Gate-emitter voltage: ±20V, Pulsed collector current: 150A, Mounting: THT, Gate charge: 249nC, Kind of package: tube, Features of semiconductor devices: integrated anti-parallel diode, Technology: TRENCHSTOP™, Turn-on time: 50ns, Turn-off time: 233ns.
Weitere Produktangebote IKW50N60DTP
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| IKW50N60DTP | Infineon Technologies |
 IGBTs INDUSTRY 14 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
IKW50N60DTPXKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 61A; 159.6W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 61A Power dissipation: 159.6W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 249nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Technology: TRENCHSTOP™ Turn-on time: 50ns Turn-off time: 233ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IKW50N60DTP |
|
Hersteller: Infineon Technologies
IGBTs INDUSTRY 14
IGBTs INDUSTRY 14
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IKW50N60DTPXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 61A; 159.6W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 61A
Power dissipation: 159.6W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 249nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
Turn-on time: 50ns
Turn-off time: 233ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 61A; 159.6W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 61A
Power dissipation: 159.6W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 249nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
Turn-on time: 50ns
Turn-off time: 233ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH