IKW75N60TA Infineon Technologies

Description: IKW75N60 - AUTOMOTIVE IGBT DISCR, Power - Max: 428 W, Current - Collector Pulsed (Icm): 225 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 80 A, Part Status: Active, Gate Charge: 470 nC, Test Condition: 400V, 75A, 5Ohm, 15V, Switching Energy: 2mJ (on), 2.5mJ (off), Td (on/off) @ 25°C: 33ns/330ns, IGBT Type: Trench Field Stop, Supplier Device Package: PG-TO247-3-41, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A, Reverse Recovery Time (trr): 121 ns, Input Type: Standard, Operating Temperature: -40°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Bulk.