IKY40N120CH3XKSA1 Infineon Technologies
auf Bestellung 6720 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 240+ | 10.44 EUR |
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Technische Details IKY40N120CH3XKSA1 Infineon Technologies
Description: IGBT 1200V 80A TO247-4, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 350 ns, Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 40A, Supplier Device Package: PG-TO247-4, Td (on/off) @ 25°C: 30ns/280ns, Switching Energy: 2.18mJ (on), 1.3mJ (off), Test Condition: 600V, 40A, 12Ohm, 15V, Gate Charge: 190 nC, Part Status: Active, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 500 W.
Weitere Produktangebote IKY40N120CH3XKSA1 nach Preis ab 11.49 EUR bis 21.24 EUR
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IKY40N120CH3XKSA1 | Hersteller : Infineon Technologies |
 Description: IGBT 1200V 80A TO247-4Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 350 ns Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 40A Supplier Device Package: PG-TO247-4 Td (on/off) @ 25°C: 30ns/280ns Switching Energy: 2.18mJ (on), 1.3mJ (off) Test Condition: 600V, 40A, 12Ohm, 15V Gate Charge: 190 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 160 A Power - Max: 500 W |
auf Bestellung 226 Stücke: Lieferzeit 21-28 Tag (e) |
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IKY40N120CH3XKSA1 | Hersteller : Infineon Technologies |
IGBT Transistors INDUSTRY 14 |
auf Bestellung 206 Stücke: Lieferzeit 14-28 Tag (e) |
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IKY40N120CH3XKSA1 | Hersteller : Infineon Technologies |
Trans IGBT Chip N-CH 1200V 80A 500000mW 4-Pin(4+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| IKY40N120CH3XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 136W; TO247PLUS-4; H3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 136W Case: TO247PLUS-4 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 0.19µC Kind of package: tube Manufacturer series: H3 Turn-on time: 59ns Turn-off time: 306ns Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IKY40N120CH3XKSA1 | Hersteller : Infineon Technologies |
Trans IGBT Chip N-CH 1200V 80A 500mW 4-Pin(4+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| IKY40N120CH3XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 136W; TO247PLUS-4; H3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 136W Case: TO247PLUS-4 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 0.19µC Kind of package: tube Manufacturer series: H3 Turn-on time: 59ns Turn-off time: 306ns Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |