IKZ75N65NH5 Infineon technologies

Description: IKZ75N65 - DISCRETE IGBT WITH AN, Packaging: Bulk, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 59 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A, Supplier Device Package: PG-TO247-4-1, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 52ns/412ns, Switching Energy: 880µJ (on), 520µJ (off), Test Condition: 400V, 37.5A, 27Ohm, 15V, Gate Charge: 166 nC, Part Status: Active, Current - Collector (Ic) (Max): 90 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 300 A, Power - Max: 395 W.