Produkte > VISHAY SEMICONDUCTORS > IMBD4448-E3-18
IMBD4448-E3-18

IMBD4448-E3-18 Vishay Semiconductors

imbd4448.pdf
Hersteller: Vishay Semiconductors
Small Signal Switching Diodes 750V 150mA 4ns 500mA IFSM
auf Bestellung 3467 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+0.54 EUR
10+0.36 EUR
100+0.2 EUR
500+0.14 EUR
1000+0.11 EUR
2500+0.1 EUR
5000+0.083 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details IMBD4448-E3-18 Vishay Semiconductors

Description: DIODE GEN PURP 75V 150MA SOT23-3, Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA, Voltage - DC Reverse (Vr) (Max): 75 V, Part Status: Active, Operating Temperature - Junction: 150°C (Max), Supplier Device Package: SOT-23-3, Current - Average Rectified (Io): 150mA, Technology: Standard, Reverse Recovery Time (trr): 4 ns, Speed: Small Signal =< 200mA (Io), Any Speed, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).

Weitere Produktangebote IMBD4448-E3-18

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
IMBD4448-E3-18 IMBD4448-E3-18 Vishay General Semiconductor - Diodes Division imbd4448.pdf Description: DIODE GEN PURP 75V 150MA SOT23-3
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io): 150mA
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IMBD4448-E3-18 IMBD4448-E3-18 Vishay General Semiconductor - Diodes Division imbd4448.pdf Description: DIODE GEN PURP 75V 150MA SOT23-3
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io): 150mA
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IMBD4448-E3-18 imbd4448.pdf
IMBD4448-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 75V 150MA SOT23-3
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io): 150mA
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IMBD4448-E3-18 imbd4448.pdf
IMBD4448-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 75V 150MA SOT23-3
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io): 150mA
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH