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IMBF170R450M1XTMA1

IMBF170R450M1XTMA1 Infineon Technologies

Infineon-IMBF170R450M1-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b70171820c850e1ad9
Hersteller: Infineon Technologies
Description: SICFET N-CH 1700V 9.8A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 2A, 15V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 2.5mA
Supplier Device Package: PG-TO263-7-13
Drive Voltage (Max Rds On, Min Rds On): 12V, 15V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 1000 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1000+4.18 EUR
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IMBF170R450M1XTMA1 Infineon Technologies

Description: SICFET N-CH 1700V 9.8A TO263-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.8A (Tc), Rds On (Max) @ Id, Vgs: 450mOhm @ 2A, 15V, Power Dissipation (Max): 107W (Tc), Vgs(th) (Max) @ Id: 5.7V @ 2.5mA, Supplier Device Package: PG-TO263-7-13, Drive Voltage (Max Rds On, Min Rds On): 12V, 15V, Vgs (Max): +20V, -10V, Drain to Source Voltage (Vdss): 1700 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 12 V, Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 1000 V.

Weitere Produktangebote IMBF170R450M1XTMA1 nach Preis ab 4.77 EUR bis 10.98 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
IMBF170R450M1XTMA1 IMBF170R450M1XTMA1 Infineon Technologies Infineon-IMBF170R450M1-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b70171820c850e1ad9 Description: SICFET N-CH 1700V 9.8A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 2A, 15V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 2.5mA
Supplier Device Package: PG-TO263-7-13
Drive Voltage (Max Rds On, Min Rds On): 12V, 15V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 1000 V
auf Bestellung 1551 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.86 EUR
10+7.32 EUR
100+5.31 EUR
500+5.04 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IMBF170R450M1XTMA1 IMBF170R450M1XTMA1 Infineon Technologies Infineon_IMBF170R450M1_DataSheet_v02_03_EN.pdf SiC MOSFETs CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
auf Bestellung 3715 Stücke:
Lieferzeit 10-14 Tag (e)
1+10.98 EUR
10+7.41 EUR
100+5.39 EUR
500+5.1 EUR
1000+4.77 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IMBF170R450M1XTMA1 Infineon-IMBF170R450M1-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b70171820c850e1ad9
IMBF170R450M1XTMA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 1700V 9.8A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 2A, 15V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 2.5mA
Supplier Device Package: PG-TO263-7-13
Drive Voltage (Max Rds On, Min Rds On): 12V, 15V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 1000 V
auf Bestellung 1551 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+10.86 EUR
10+7.32 EUR
100+5.31 EUR
500+5.04 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IMBF170R450M1XTMA1 Infineon_IMBF170R450M1_DataSheet_v02_03_EN.pdf
IMBF170R450M1XTMA1
Hersteller: Infineon Technologies
SiC MOSFETs CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
auf Bestellung 3715 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+10.98 EUR
10+7.41 EUR
100+5.39 EUR
500+5.1 EUR
1000+4.77 EUR
Im Einkaufswagen  Stück im Wert von  UAH