IMBG120R026M2HXTMA1 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 1+ | 19.2 EUR |
| 10+ | 14.17 EUR |
| 100+ | 12.71 EUR |
| 500+ | 12.04 EUR |
| 1000+ | 10.6 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IMBG120R026M2HXTMA1 Infineon Technologies
Description: SICFET N-CH 1200V 75A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 25.4mOhm @ 27.3A, 18V, Power Dissipation (Max): 335W (Tc), Vgs(th) (Max) @ Id: 5.1V @ 8.6mA, Supplier Device Package: PG-TO263-7-12, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +23V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 800 V.
Weitere Produktangebote IMBG120R026M2HXTMA1 nach Preis ab 11.89 EUR bis 19.55 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IMBG120R026M2HXTMA1 | Infineon Technologies |
 Description: SICFET N-CH 1200V 75A TO263Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 25.4mOhm @ 27.3A, 18V Power Dissipation (Max): 335W (Tc) Vgs(th) (Max) @ Id: 5.1V @ 8.6mA Supplier Device Package: PG-TO263-7-12 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +23V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 800 V |
auf Bestellung 965 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IMBG120R026M2HXTMA1 |
|
Hersteller: Infineon Technologies
Description: SICFET N-CH 1200V 75A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 25.4mOhm @ 27.3A, 18V
Power Dissipation (Max): 335W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 8.6mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 800 V
Description: SICFET N-CH 1200V 75A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 25.4mOhm @ 27.3A, 18V
Power Dissipation (Max): 335W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 8.6mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 800 V
auf Bestellung 965 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 19.55 EUR |
| 10+ | 13.64 EUR |
| 100+ | 11.89 EUR |