Technische Details IMBG65R057M1HXTMA1 Infineon Technologies
Description: SILICON CARBIDE MOSFET PG-TO263-, Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): +23V, -5V, Drive Voltage (Max Rds On, Min Rds On): 18V, Part Status: Active, Supplier Device Package: PG-TO263-7-12, Vgs(th) (Max) @ Id: 5.7V @ 5mA, Power Dissipation (Max): 161W (Tc), Rds On (Max) @ Id, Vgs: 74mOhm @ 16.7A, 18V, Current - Continuous Drain (Id) @ 25°C: 39A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA, Packaging: Tape & Reel (TR).
Weitere Produktangebote IMBG65R057M1HXTMA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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IMBG65R057M1HXTMA1 | Infineon Technologies |
 Description: SILICON CARBIDE MOSFET PG-TO263-Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): +23V, -5V Drive Voltage (Max Rds On, Min Rds On): 18V Part Status: Active Supplier Device Package: PG-TO263-7-12 Vgs(th) (Max) @ Id: 5.7V @ 5mA Power Dissipation (Max): 161W (Tc) Rds On (Max) @ Id, Vgs: 74mOhm @ 16.7A, 18V Current - Continuous Drain (Id) @ 25°C: 39A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IMBG65R057M1HXTMA1 | Infineon Technologies |
Description: SILICON CARBIDE MOSFET PG-TO263- Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): +23V, -5V Drive Voltage (Max Rds On, Min Rds On): 18V Part Status: Active Supplier Device Package: PG-TO263-7-12 Vgs(th) (Max) @ Id: 5.7V @ 5mA Power Dissipation (Max): 161W (Tc) Rds On (Max) @ Id, Vgs: 74mOhm @ 16.7A, 18V Current - Continuous Drain (Id) @ 25°C: 39A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IMBG65R057M1HXTMA1 |
|
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET PG-TO263-
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -5V
Drive Voltage (Max Rds On, Min Rds On): 18V
Part Status: Active
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 5mA
Power Dissipation (Max): 161W (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 16.7A, 18V
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Description: SILICON CARBIDE MOSFET PG-TO263-
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -5V
Drive Voltage (Max Rds On, Min Rds On): 18V
Part Status: Active
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 5mA
Power Dissipation (Max): 161W (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 16.7A, 18V
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IMBG65R057M1HXTMA1 |
|
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET PG-TO263-
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -5V
Drive Voltage (Max Rds On, Min Rds On): 18V
Part Status: Active
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 5mA
Power Dissipation (Max): 161W (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 16.7A, 18V
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Description: SILICON CARBIDE MOSFET PG-TO263-
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -5V
Drive Voltage (Max Rds On, Min Rds On): 18V
Part Status: Active
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 5mA
Power Dissipation (Max): 161W (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 16.7A, 18V
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH