IMCQ120R010M2HXTMA1 Infineon Technologies
Hersteller: Infineon Technologies
SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 : Q-DPAK top-side cooling
| Anzahl | Preis |
|---|---|
| 1+ | 45.5 EUR |
| 10+ | 33.25 EUR |
| 100+ | 32.23 EUR |
| 500+ | 31.61 EUR |
| 750+ | 30.1 EUR |
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Technische Details IMCQ120R010M2HXTMA1 Infineon Technologies
Description: SICFET N-CH 1200V 195A 22PWRBSOP, Packaging: Tape & Reel (TR), Package / Case: 22-PowerBSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 195A (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 69A, 18V, Power Dissipation (Max): 880W (Tc), Vgs(th) (Max) @ Id: 5.1V @ 21.7mA, Supplier Device Package: PG-HDSOP-22, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +23V, -7V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 150.1 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 6320 pF @ 800 V.
Weitere Produktangebote IMCQ120R010M2HXTMA1 nach Preis ab 32.24 EUR bis 45.53 EUR
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IMCQ120R010M2HXTMA1 | Infineon Technologies |
Description: SICFET N-CH 1200V 195A 22PWRBSOP Packaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 69A, 18V Power Dissipation (Max): 880W (Tc) Vgs(th) (Max) @ Id: 5.1V @ 21.7mA Supplier Device Package: PG-HDSOP-22 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 150.1 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 6320 pF @ 800 V |
auf Bestellung 477 Stücke: Lieferzeit 10-14 Tag (e) |
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| IMCQ120R010M2HXTMA1 |
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Hersteller: Infineon Technologies
Description: SICFET N-CH 1200V 195A 22PWRBSOP
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 69A, 18V
Power Dissipation (Max): 880W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 21.7mA
Supplier Device Package: PG-HDSOP-22
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 150.1 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6320 pF @ 800 V
Description: SICFET N-CH 1200V 195A 22PWRBSOP
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 69A, 18V
Power Dissipation (Max): 880W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 21.7mA
Supplier Device Package: PG-HDSOP-22
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 150.1 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6320 pF @ 800 V
auf Bestellung 477 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 45.53 EUR |
| 10+ | 33.27 EUR |
| 100+ | 32.24 EUR |