IMD6AT108 Rohm Semiconductor
auf Bestellung 2990 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 669+ | 0.22 EUR |
| 1000+ | 0.2 EUR |
| 2500+ | 0.19 EUR |
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Technische Details IMD6AT108 Rohm Semiconductor
Description: TRANS NPN/PNP PREBIAS 0.3W SMT6, Packaging: Tape & Reel (TR), Package / Case: SC-74, SOT-457, Mounting Type: Surface Mount, Transistor Type: 1 PNP Pre-Biased, 1 NPN, Power - Max: 300mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V, Frequency - Transition: 250MHz, Resistor - Base (R1): 4.7kOhms, Supplier Device Package: SMT6.
Weitere Produktangebote IMD6AT108 nach Preis ab 0.16 EUR bis 0.79 EUR
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IMD6AT108 | Hersteller : ROHM Semiconductor |
 Digital Transistors PNP/NPN 50V 100MA SOT-457 |
auf Bestellung 5745 Stücke: Lieferzeit 10-14 Tag (e) |
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IMD6AT108 | Hersteller : Rohm Semiconductor |
Description: TRANS NPN/PNP PREBIAS 0.3W SMT6 Packaging: Cut Tape (CT) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 1 PNP Pre-Biased, 1 NPN Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 4.7kOhms Supplier Device Package: SMT6 |
auf Bestellung 4861 Stücke: Lieferzeit 10-14 Tag (e) |
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IMD6AT108 | Hersteller : Rohm Semiconductor |
Trans Digital BJT NPN/PNP 50V 100mA 300mW 6-Pin SMT T/R |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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| IMD6A-T108 | Hersteller : ROH | 07+; |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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IMD6AT108 | Hersteller : Rohm Semiconductor |
Description: TRANS NPN/PNP PREBIAS 0.3W SMT6 Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 1 PNP Pre-Biased, 1 NPN Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 4.7kOhms Supplier Device Package: SMT6 |
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