IMH3AT110 Rohm Semiconductor
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 537+ | 0.27 EUR |
| 557+ | 0.25 EUR |
| 1000+ | 0.24 EUR |
| 2500+ | 0.22 EUR |
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Technische Details IMH3AT110 Rohm Semiconductor
Description: TRANS PREBIAS DUAL NPN SMT6, Packaging: Tape & Reel (TR), Package / Case: SC-74, SOT-457, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual), Power - Max: 300mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V, Frequency - Transition: 250MHz, Resistor - Base (R1): 4.7kOhms, Supplier Device Package: SMT6, Part Status: Active.
Weitere Produktangebote IMH3AT110 nach Preis ab 0.12 EUR bis 0.74 EUR
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IMH3AT110 | Hersteller : Rohm Semiconductor |
 Trans Digital BJT NPN 50V 100mA 300mW 6-Pin SMT T/R |
auf Bestellung 2900 Stücke: Lieferzeit 14-21 Tag (e) |
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IMH3AT110 | Hersteller : ROHM Semiconductor |
Digital Transistors DUAL NPN 50V 100MA SOT-457 |
auf Bestellung 2980 Stücke: Lieferzeit 10-14 Tag (e) |
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IMH3AT110 | Hersteller : Rohm Semiconductor |
Description: TRANS PREBIAS DUAL NPN SMT6 Packaging: Cut Tape (CT) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 4.7kOhms Supplier Device Package: SMT6 Part Status: Active |
auf Bestellung 2999 Stücke: Lieferzeit 10-14 Tag (e) |
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IMH3AT110 | Hersteller : Rohm Semiconductor |
Description: TRANS PREBIAS DUAL NPN SMT6 Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 4.7kOhms Supplier Device Package: SMT6 Part Status: Active |
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