IMLT40R025M2HXTMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: IMLT40R025M2HXTMA1
Packaging: Tube
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 32.1mOhm @ 15.7A, 18V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.6mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 200 V
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1800+ | 5.87 EUR |
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Technische Details IMLT40R025M2HXTMA1 Infineon Technologies
Description: IMLT40R025M2HXTMA1, Packaging: Cut Tape (CT), Package / Case: 16-PowerSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 68A (Tc), Rds On (Max) @ Id, Vgs: 32.1mOhm @ 15.7A, 18V, Power Dissipation (Max): 214W (Tc), Vgs(th) (Max) @ Id: 5.6V @ 5.6mA, Supplier Device Package: PG-HDSOP-16-6, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +23V, -7V, Drain to Source Voltage (Vdss): 400 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 200 V.
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IMLT40R025M2HXTMA1 | Hersteller : Infineon Technologies |
Description: IMLT40R025M2HXTMA1 Packaging: Cut Tape (CT) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 68A (Tc) Rds On (Max) @ Id, Vgs: 32.1mOhm @ 15.7A, 18V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 5.6mA Supplier Device Package: PG-HDSOP-16-6 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 200 V |
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