IMLT65R075M2HXTMA1 Infineon Technologies
| Anzahl | Privatkunde |
|---|---|
| 1+ | 11.79 EUR |
| 10+ | 6.24 EUR |
| 100+ | 5.71 EUR |
| 500+ | 5.01 EUR |
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Technische Details IMLT65R075M2HXTMA1 Infineon Technologies
Description: IMLT65R075M2HXTMA1, Packaging: Tube, Package / Case: 16-PowerSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 34.7A (Tc), Rds On (Max) @ Id, Vgs: 68mOhm @ 11.9A, 20V, Power Dissipation (Max): 187W (Tc), Vgs(th) (Max) @ Id: 5.6V @ 2.4mA, Supplier Device Package: PG-HDSOP-16-6, Drive Voltage (Max Rds On, Min Rds On): 15V, 20V, Vgs (Max): +23V, -7V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 516 pF @ 400 V.
Weitere Produktangebote IMLT65R075M2HXTMA1 nach Preis ab 4.87 EUR bis 12.04 EUR
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IMLT65R075M2HXTMA1 | Infineon Technologies |
 Description: IMLT65R075M2HXTMA1Packaging: Tube Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34.7A (Tc) Rds On (Max) @ Id, Vgs: 68mOhm @ 11.9A, 20V Power Dissipation (Max): 187W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 2.4mA Supplier Device Package: PG-HDSOP-16-6 Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 516 pF @ 400 V |
auf Bestellung 1416 Stücke: Lieferzeit 10-14 Tag (e) |
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| IMLT65R075M2HXTMA1 |
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Hersteller: Infineon Technologies
Description: IMLT65R075M2HXTMA1
Packaging: Tube
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34.7A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 11.9A, 20V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 2.4mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 516 pF @ 400 V
Description: IMLT65R075M2HXTMA1
Packaging: Tube
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34.7A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 11.9A, 20V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 2.4mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 516 pF @ 400 V
auf Bestellung 1416 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 12.04 EUR |
| 10+ | 8.08 EUR |
| 50+ | 6.38 EUR |
| 100+ | 5.83 EUR |
| 500+ | 4.87 EUR |