IMLT65R075M2HXTMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: IMLT65R075M2HXTMA1
Packaging: Tube
Current - Continuous Drain (Id) @ 25°C: 34.7A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-PowerSOP Module
Input Capacitance (Ciss) (Max) @ Vds: 516 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -7V
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Supplier Device Package: PG-HDSOP-16-6
Vgs(th) (Max) @ Id: 5.6V @ 2.4mA
Power Dissipation (Max): 187W (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 11.9A, 20V
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Technische Details IMLT65R075M2HXTMA1 Infineon Technologies
Description: IMLT65R075M2HXTMA1, Packaging: Tube, Current - Continuous Drain (Id) @ 25°C: 34.7A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 16-PowerSOP Module, Input Capacitance (Ciss) (Max) @ Vds: 516 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 18 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): +23V, -7V, Drive Voltage (Max Rds On, Min Rds On): 15V, 20V, Supplier Device Package: PG-HDSOP-16-6, Vgs(th) (Max) @ Id: 5.6V @ 2.4mA, Power Dissipation (Max): 187W (Tc), Rds On (Max) @ Id, Vgs: 68mOhm @ 11.9A, 20V.