IMY120R036AM2HXKSA1 Infineon Technologies

Description: IMY120R036AM2HXKSA1, Packaging: Tray, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 44A (Tc), Rds On (Max) @ Id, Vgs: 45mOhm @ 18.2A, 18V, Power Dissipation (Max): 171W (Tc), Vgs(th) (Max) @ Id: 5.1V @ 5.7mA, Supplier Device Package: PG-TO247-4-19, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 800 V.