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IMY120R036AM2HXKSA1

IMY120R036AM2HXKSA1 Infineon Technologies

Infineon_1-27-2026_IMY120R036AM2HXKSA1.pdf
Hersteller: Infineon Technologies
SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode
auf Bestellung 235 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+20.06 EUR
10+14.94 EUR
100+12.46 EUR
480+10.74 EUR
1200+10.37 EUR
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Technische Details IMY120R036AM2HXKSA1 Infineon Technologies

Description: IMY120R036AM2HXKSA1, Packaging: Tray, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 44A (Tc), Rds On (Max) @ Id, Vgs: 45mOhm @ 18.2A, 18V, Power Dissipation (Max): 171W (Tc), Vgs(th) (Max) @ Id: 5.1V @ 5.7mA, Supplier Device Package: PG-TO247-4-19, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 800 V.

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IMY120R036AM2HXKSA1 IMY120R036AM2HXKSA1 Hersteller : Infineon Technologies infineon-imy120r036am2h-datasheet-en.pdf Description: IMY120R036AM2HXKSA1
Packaging: Tray
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 18.2A, 18V
Power Dissipation (Max): 171W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 5.7mA
Supplier Device Package: PG-TO247-4-19
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 800 V
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+22.86 EUR
30+13.76 EUR
120+11.77 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IMY120R036AM2HXKSA1 IMY120R036AM2HXKSA1 Hersteller : Infineon Technologies infineonimy120r036am2hdatasheeten.pdf Trans MOSFET N-CH SiC 1.2KV 44A
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