IMZ120R220M1HXKSA1 Infineon Technologies

Description: SICFET N-CH 1.2KV 13A TO247-4, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +23V, -7V, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Part Status: Active, Supplier Device Package: PG-TO247-4-1, Vgs(th) (Max) @ Id: 5.7V @ 1.6mA, Power Dissipation (Max): 75W (Tc), Rds On (Max) @ Id, Vgs: 220mOhm @ 4A, 18V, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-4, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 289 pF @ 800 V, Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 18 V.