IMZA75R060M2HXKSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: IMZA75R060M2HXKSA1
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 13.8A, 20V
Power Dissipation (Max): 108W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3mA
Supplier Device Package: PG-TO247-4-U02
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 840 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 716 pF @ 500 V
| Anzahl | Privatkunde |
|---|---|
| 2+ | 17.39 EUR |
| 30+ | 10.17 EUR |
| 60+ | 9.32 EUR |
| 120+ | 8.59 EUR |
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Technische Details IMZA75R060M2HXKSA1 Infineon Technologies
Description: IMZA75R060M2HXKSA1, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C, Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28A (Tc), Rds On (Max) @ Id, Vgs: 56mOhm @ 13.8A, 20V, Power Dissipation (Max): 108W (Tc), Vgs(th) (Max) @ Id: 5.6V @ 3mA, Supplier Device Package: PG-TO247-4-U02, Drive Voltage (Max Rds On, Min Rds On): 15V, 20V, Vgs (Max): +23V, -7V, Drain to Source Voltage (Vdss): 840 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 716 pF @ 500 V.