IMZA75R060M2HXKSA1 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 1+ | 11.62 EUR |
| 10+ | 9.29 EUR |
| 100+ | 7.52 EUR |
| 480+ | 6.67 EUR |
| 1200+ | 5.9 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IMZA75R060M2HXKSA1 Infineon Technologies
Description: IMZA75R060M2HXKSA1, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C, Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28A (Tc), Rds On (Max) @ Id, Vgs: 56mOhm @ 13.8A, 20V, Power Dissipation (Max): 108W (Tc), Vgs(th) (Max) @ Id: 5.6V @ 3mA, Supplier Device Package: PG-TO247-4-U02, Drive Voltage (Max Rds On, Min Rds On): 15V, 20V, Vgs (Max): +23V, -7V, Drain to Source Voltage (Vdss): 840 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 716 pF @ 500 V.
Weitere Produktangebote IMZA75R060M2HXKSA1 nach Preis ab 6.23 EUR bis 12.76 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IMZA75R060M2HXKSA1 | Hersteller : Infineon Technologies |
 Description: IMZA75R060M2HXKSA1Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 56mOhm @ 13.8A, 20V Power Dissipation (Max): 108W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 3mA Supplier Device Package: PG-TO247-4-U02 Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 840 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 716 pF @ 500 V |
auf Bestellung 470 Stücke: Lieferzeit 10-14 Tag (e) |
|