IMZC140R038M2HXKSA1 Infineon Technologies

Description: IMZC140R038M2HXKSA1, Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 1000 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V, Drain to Source Voltage (Vdss): 1.4 kV, Vgs (Max): +23V, -7V, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Supplier Device Package: PG-TO247-4-17, Vgs(th) (Max) @ Id: 5.1V @ 6.4mA, Power Dissipation (Max): 242W (Tc), Rds On (Max) @ Id, Vgs: 38mOhm @ 20.4A, 18V, Current - Continuous Drain (Id) @ 25°C: 52A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-4, Packaging: Tube.