IPA032N06N3GXKSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 84A TO220-3-31
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 80A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 118µA
Supplier Device Package: PG-TO220-3-31
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
Produktrezensionen
Produktbewertung abgeben
Technische Details IPA032N06N3GXKSA1 Infineon Technologies
Description: MOSFET N-CH 60V 84A TO220-3-31, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 84A (Tc), Rds On (Max) @ Id, Vgs: 3.2mOhm @ 80A, 10V, Power Dissipation (Max): 41W (Tc), Vgs(th) (Max) @ Id: 4V @ 118µA, Supplier Device Package: PG-TO220-3-31, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V.
Weitere Produktangebote IPA032N06N3GXKSA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
|
IPA032N06N3GXKSA1 | Infineon Technologies |
MOSFET TRENCH 40<-<100V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
IPA032N06N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 84A; 41W; TO220FP Mounting: THT Type of transistor: N-MOSFET Kind of package: tube Polarisation: unipolar On-state resistance: 3.2mΩ Gate-source voltage: ±20V Power dissipation: 41W Drain-source voltage: 60V Drain current: 84A Case: TO220FP Kind of channel: enhancement Technology: OptiMOS™ 3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IPA032N06N3GXKSA1 |
![]() |
Hersteller: Infineon Technologies
MOSFET TRENCH 40<-<100V
MOSFET TRENCH 40<-<100V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPA032N06N3GXKSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 84A; 41W; TO220FP
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
On-state resistance: 3.2mΩ
Gate-source voltage: ±20V
Power dissipation: 41W
Drain-source voltage: 60V
Drain current: 84A
Case: TO220FP
Kind of channel: enhancement
Technology: OptiMOS™ 3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 84A; 41W; TO220FP
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
On-state resistance: 3.2mΩ
Gate-source voltage: ±20V
Power dissipation: 41W
Drain-source voltage: 60V
Drain current: 84A
Case: TO220FP
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH



