IPA057N08N3GXKSA1 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 60A; 39W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 60A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 5.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
| Anzahl | Preis |
|---|---|
| 25+ | 2.97 EUR |
| 29+ | 2.55 EUR |
| 50+ | 1.66 EUR |
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Technische Details IPA057N08N3GXKSA1 INFINEON TECHNOLOGIES
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 80V; 60A; 39W; TO220FP, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 80V, Drain current: 60A, Power dissipation: 39W, Case: TO220FP, Gate-source voltage: ±20V, On-state resistance: 5.7mΩ, Mounting: THT, Kind of package: tube, Kind of channel: enhancement, Technology: OptiMOS™ 3.
Weitere Produktangebote IPA057N08N3GXKSA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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IPA057N08N3GXKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 80V 60A TO220-3 |
auf Bestellung 64 Stücke: Lieferzeit 10-14 Tag (e) |