IPA060N06NM5SXKSA1 Infineon Technologies
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 410+ | 1.32 EUR |
| 500+ | 1.22 EUR |
| 1000+ | 1.11 EUR |
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Technische Details IPA060N06NM5SXKSA1 Infineon Technologies
Description: MOSFET N-CH 60V 56A TO220, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 56A (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 56A, 10V, Power Dissipation (Max): 33W (Tc), Vgs(th) (Max) @ Id: 3.3V @ 36µA, Supplier Device Package: PG-TO220 Full Pack, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 30 V.
Weitere Produktangebote IPA060N06NM5SXKSA1 nach Preis ab 1.22 EUR bis 1.89 EUR
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IPA060N06NM5SXKSA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 60V 56A 3-Pin(3+Tab) TO-220FP Tube |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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IPA060N06NM5SXKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 40A; Idm: 224A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 40A Pulsed drain current: 224A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: OptiMOS™ 3 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 478 Stücke: Lieferzeit 7-14 Tag (e) |
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IPA060N06NM5SXKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 40A; Idm: 224A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 40A Pulsed drain current: 224A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: OptiMOS™ 3 |
auf Bestellung 478 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPA060N06NM5SXKSA1 | Hersteller : Infineon Technologies |
Power Transistor MOSFET |
Produkt ist nicht verfügbar |
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IPA060N06NM5SXKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 60V 56A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
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IPA060N06NM5SXKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 60V 56A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
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IPA060N06NM5SXKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 60V 56A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 56A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 36µA Supplier Device Package: PG-TO220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 30 V |
Produkt ist nicht verfügbar |
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IPA060N06NM5SXKSA1 | Hersteller : Infineon Technologies |
MOSFETs TRENCH 40<-<100V |
Produkt ist nicht verfügbar |