
IPA060N06NM5SXKSA1 Infineon Technologies
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
---|---|
410+ | 1.35 EUR |
500+ | 1.25 EUR |
1000+ | 1.14 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IPA060N06NM5SXKSA1 Infineon Technologies
Description: MOSFET N-CH 60V 56A TO220, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 56A (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 56A, 10V, Power Dissipation (Max): 33W (Tc), Vgs(th) (Max) @ Id: 3.3V @ 36µA, Supplier Device Package: PG-TO220 Full Pack, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 30 V.
Weitere Produktangebote IPA060N06NM5SXKSA1 nach Preis ab 1.23 EUR bis 1.89 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
IPA060N06NM5SXKSA1 | Hersteller : Infineon Technologies |
![]() |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
![]() |
IPA060N06NM5SXKSA1 | Hersteller : INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 40A; Idm: 224A; 33W; TO220FP Type of transistor: N-MOSFET Case: TO220FP Drain-source voltage: 60V Drain current: 40A On-state resistance: 6mΩ Power dissipation: 33W Polarisation: unipolar Kind of package: tube Technology: OptiMOS™ 3 Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 224A Mounting: THT Anzahl je Verpackung: 1 Stücke |
auf Bestellung 480 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||
![]() |
IPA060N06NM5SXKSA1 | Hersteller : INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 40A; Idm: 224A; 33W; TO220FP Type of transistor: N-MOSFET Case: TO220FP Drain-source voltage: 60V Drain current: 40A On-state resistance: 6mΩ Power dissipation: 33W Polarisation: unipolar Kind of package: tube Technology: OptiMOS™ 3 Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 224A Mounting: THT |
auf Bestellung 480 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
IPA060N06NM5SXKSA1 | Hersteller : Infineon Technologies |
![]() |
Produkt ist nicht verfügbar |
||||||||||||||
![]() |
IPA060N06NM5SXKSA1 | Hersteller : Infineon Technologies |
![]() |
Produkt ist nicht verfügbar |
|||||||||||||
![]() |
IPA060N06NM5SXKSA1 | Hersteller : Infineon Technologies |
![]() |
Produkt ist nicht verfügbar |
|||||||||||||
![]() |
IPA060N06NM5SXKSA1 | Hersteller : Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 56A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 36µA Supplier Device Package: PG-TO220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 30 V |
Produkt ist nicht verfügbar |
|||||||||||||
![]() |
IPA060N06NM5SXKSA1 | Hersteller : Infineon Technologies |
![]() |
Produkt ist nicht verfügbar |