Produkte > INFINEON TECHNOLOGIES > IPA082N10NF2SXKSA1
IPA082N10NF2SXKSA1

IPA082N10NF2SXKSA1 Infineon Technologies

Infineon-IPA082N10NF2S-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0179176be5971162
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-TO220-3
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 30A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 46µA
Supplier Device Package: PG-TO220 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V
auf Bestellung 2430 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
338+1.38 EUR
Mindestbestellmenge: 338 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details IPA082N10NF2SXKSA1 Infineon Technologies

Description: TRENCH >=100V PG-TO220-3, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 46A (Tc), Rds On (Max) @ Id, Vgs: 8.2mOhm @ 30A, 10V, Power Dissipation (Max): 35W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 46µA, Supplier Device Package: PG-TO220 Full Pack, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V.

Weitere Produktangebote IPA082N10NF2SXKSA1 nach Preis ab 1.2 EUR bis 4.07 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
IPA082N10NF2SXKSA1 IPA082N10NF2SXKSA1 Infineon Technologies Infineon_IPA082N10NF2S_DataSheet_v02_01_EN.pdf MOSFETs IFX FET >80 - 100V
auf Bestellung 544 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.07 EUR
10+2.6 EUR
100+1.78 EUR
500+1.51 EUR
1000+1.34 EUR
2500+1.27 EUR
5000+1.2 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IPA082N10NF2SXKSA1 IPA082N10NF2SXKSA1 Infineon Technologies Infineon-IPA082N10NF2S-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0179176be5971162 Description: TRENCH >=100V PG-TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 30A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 46µA
Supplier Device Package: PG-TO220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
IPA082N10NF2SXKSA1 Infineon_IPA082N10NF2S_DataSheet_v02_01_EN.pdf
IPA082N10NF2SXKSA1
Hersteller: Infineon Technologies
MOSFETs IFX FET >80 - 100V
auf Bestellung 544 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+4.07 EUR
10+2.6 EUR
100+1.78 EUR
500+1.51 EUR
1000+1.34 EUR
2500+1.27 EUR
5000+1.2 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IPA082N10NF2SXKSA1 Infineon-IPA082N10NF2S-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0179176be5971162
IPA082N10NF2SXKSA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 30A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 46µA
Supplier Device Package: PG-TO220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH