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IPA50R299CPXKSA1

IPA50R299CPXKSA1 Infineon Technologies


IPA50R299CP.pdf Hersteller: Infineon Technologies
Description: MOSFET N-CH 550V 12A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO220-3-31
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V
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Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
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Mindestbestellmenge: 315
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Technische Details IPA50R299CPXKSA1 Infineon Technologies

Description: MOSFET N-CH 550V 12A TO220-FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V, Power Dissipation (Max): 104W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 440µA, Supplier Device Package: PG-TO220-3-31, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 550 V, Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V.

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IPA50R299CPXKSA1 IPA50R299CPXKSA1 Hersteller : Infineon Technologies ipa50r299cp_rev1.2.pdf Trans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-220FP Tube
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Lieferzeit 14-21 Tag (e)
IPA50R299CPXKSA1 IPA50R299CPXKSA1 Hersteller : Infineon Technologies ipa50r299cp_rev1.2.pdf Trans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-220FP Tube
Produkt ist nicht verfügbar
IPA50R299CPXKSA1 IPA50R299CPXKSA1 Hersteller : Infineon Technologies IPA50R299CP.pdf Description: MOSFET N-CH 550V 12A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO220-3-31
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V
Produkt ist nicht verfügbar