IPA50R350CP

IPA50R350CP Infineon Technologies


INFN-S-A0004583200-1.pdf?t.download=true&u=5oefqw Hersteller: Infineon Technologies
Description: 10A, 500V, 0.35OHM, N-CHANNEL,
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5.6A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 370µA
Supplier Device Package: PG-TO220-3-31
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 100 V
auf Bestellung 500 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
247+2.15 EUR
Mindestbestellmenge: 247
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Technische Details IPA50R350CP Infineon Technologies

Description: 10A, 500V, 0.35OHM, N-CHANNEL,, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 350mOhm @ 5.6A, 10V, Power Dissipation (Max): 32W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 370µA, Supplier Device Package: PG-TO220-3-31, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 100 V.

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IPA50R350CP Hersteller : Infineon technologies INFN-S-A0004583200-1.pdf?t.download=true&u=5oefqw
auf Bestellung 500 Stücke:
Lieferzeit 21-28 Tag (e)
IPA50R350CP IPA50R350CP Hersteller : Infineon Technologies Infineon_IPA50R350CP_DS_v02_02_EN-3164104.pdf MOSFET N-Ch 500V 10A TO220FP-3 CoolMOS CP
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