IPA50R380CEXKSA2 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4A; 29.2W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4A
Power dissipation: 29.2W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
| Anzahl | Preis |
|---|---|
| 46+ | 1.56 EUR |
| 61+ | 1.19 EUR |
| 70+ | 1.03 EUR |
| 93+ | 0.77 EUR |
Produktrezensionen
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Technische Details IPA50R380CEXKSA2 INFINEON TECHNOLOGIES
Description: MOSFET N-CH 500V 6.3A TO220, Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 13V, Part Status: Active, Supplier Device Package: PG-TO220-3-FP, Vgs(th) (Max) @ Id: 3.5V @ 260µA, Power Dissipation (Max): 29.2W (Tc), Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 13V, Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.
Weitere Produktangebote IPA50R380CEXKSA2 nach Preis ab 0.66 EUR bis 5.93 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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IPA50R380CEXKSA2 | Infineon Technologies |
MOSFETs CONSUMER |
auf Bestellung 1635 Stücke: Lieferzeit 10-14 Tag (e) |
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IPA50R380CEXKSA2 | Infineon Technologies |
Description: MOSFET N-CH 500V 6.3A TO220 Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 13V Power Dissipation (Max): 29.2W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 260µA Supplier Device Package: PG-TO220-3-FP Drive Voltage (Max Rds On, Min Rds On): 13V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 100 V |
auf Bestellung 77 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPA50R380CEXKSA2 |
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Hersteller: Infineon Technologies
MOSFETs CONSUMER
MOSFETs CONSUMER
auf Bestellung 1635 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.68 EUR |
| 10+ | 1.46 EUR |
| 100+ | 1.1 EUR |
| 500+ | 0.87 EUR |
| 1000+ | 0.77 EUR |
| 2500+ | 0.71 EUR |
| 5000+ | 0.66 EUR |
| IPA50R380CEXKSA2 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 6.3A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 13V
Power Dissipation (Max): 29.2W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 260µA
Supplier Device Package: PG-TO220-3-FP
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 100 V
Description: MOSFET N-CH 500V 6.3A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 13V
Power Dissipation (Max): 29.2W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 260µA
Supplier Device Package: PG-TO220-3-FP
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 100 V
auf Bestellung 77 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 77+ | 5.93 EUR |