IPA50R650CE Infineon Technologies

Description: MOSFET N-CH 500V 6.1A TO220-FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc), Rds On (Max) @ Id, Vgs: 650mOhm @ 1.8A, 13V, Power Dissipation (Max): 27.2W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 150µA, Supplier Device Package: PG-TO220-FP, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 13V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 342 pF @ 100 V.