auf Bestellung 500 Stücke:
Lieferzeit 178-182 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 1.52 EUR |
10+ | 1.36 EUR |
100+ | 0.93 EUR |
500+ | 0.77 EUR |
1000+ | 0.66 EUR |
2500+ | 0.6 EUR |
5000+ | 0.55 EUR |
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Technische Details IPA50R800CE Infineon Technologies
Description: MOSFET N-CH 500V 5A TO220-FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), Rds On (Max) @ Id, Vgs: 800mOhm @ 1.5A, 13V, Power Dissipation (Max): 26.4W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 130µA, Supplier Device Package: PG-TO220-FP, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 13V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V.
Weitere Produktangebote IPA50R800CE
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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IPA50R800CE | Hersteller : Infineon technologies |
auf Bestellung 500 Stücke: Lieferzeit 21-28 Tag (e) |
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IPA50R800CE | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 500V 5A TO220-FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 1.5A, 13V Power Dissipation (Max): 26.4W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 130µA Supplier Device Package: PG-TO220-FP Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 13V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V |
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