Technische Details IPA60R099C7XKSA1 Infineon Technologies
Description: MOSFET N-CH 600V 12A TO220-FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V, Power Dissipation (Max): 33W (Tc), Vgs(th) (Max) @ Id: 4V @ 490µA, Supplier Device Package: PG-TO220-FP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1819 pF @ 400 V.
Weitere Produktangebote IPA60R099C7XKSA1 nach Preis ab 3.48 EUR bis 9.31 EUR
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IPA60R099C7XKSA1 | INFINEON TECHNOLOGIES |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 83A; 33W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ C7 Polarisation: unipolar Drain-source voltage: 650V Drain current: 8A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 42nC Pulsed drain current: 83A |
auf Bestellung 28 Stücke: Lieferzeit 14-21 Tag (e) |
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IPA60R099C7XKSA1 | Infineon Technologies |
MOSFETs HIGH POWER_NEW |
auf Bestellung 385 Stücke: Lieferzeit 10-14 Tag (e) |
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IPA60R099C7XKSA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 12A TO220-FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 4V @ 490µA Supplier Device Package: PG-TO220-FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1819 pF @ 400 V |
auf Bestellung 558 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPA60R099C7XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 83A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 42nC
Pulsed drain current: 83A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 83A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 42nC
Pulsed drain current: 83A
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 14+ | 5.43 EUR |
| 19+ | 3.78 EUR |
| IPA60R099C7XKSA1 |
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Hersteller: Infineon Technologies
MOSFETs HIGH POWER_NEW
MOSFETs HIGH POWER_NEW
auf Bestellung 385 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 8.43 EUR |
| 10+ | 4.45 EUR |
| 100+ | 4.26 EUR |
| 500+ | 3.48 EUR |
| IPA60R099C7XKSA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 12A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 490µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1819 pF @ 400 V
Description: MOSFET N-CH 600V 12A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 490µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1819 pF @ 400 V
auf Bestellung 558 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 9.31 EUR |
| 50+ | 4.9 EUR |
| 100+ | 4.47 EUR |
| 500+ | 3.73 EUR |