IPA60R099C7XKSA1 Infineon Technologies
| Anzahl | Privatkunde |
|---|---|
| 137+ | 4.76 EUR |
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Technische Details IPA60R099C7XKSA1 Infineon Technologies
Description: MOSFET N-CH 600V 12A TO220-FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V, Power Dissipation (Max): 33W (Tc), Vgs(th) (Max) @ Id: 4V @ 490µA, Supplier Device Package: PG-TO220-FP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1819 pF @ 400 V.
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IPA60R099C7XKSA1 | Infineon Technologies |
 Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220FP Tube |
auf Bestellung 219 Stücke: Lieferzeit 14-21 Tag (e) |
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IPA60R099C7XKSA1 | Infineon Technologies |
Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220FP Tube |
auf Bestellung 220 Stücke: Lieferzeit 14-21 Tag (e) |
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IPA60R099C7XKSA1 | Infineon Technologies |
Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220FP Tube |
auf Bestellung 170 Stücke: Lieferzeit 14-21 Tag (e) |
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IPA60R099C7XKSA1 | Infineon Technologies |
Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220FP Tube |
auf Bestellung 468 Stücke: Lieferzeit 14-21 Tag (e) |
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IPA60R099C7XKSA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 12A TO220-FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 4V @ 490µA Supplier Device Package: PG-TO220-FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1819 pF @ 400 V |
auf Bestellung 540 Stücke: Lieferzeit 10-14 Tag (e) |
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IPA60R099C7XKSA1 | Infineon Technologies |
MOSFETs HIGH POWER_NEW |
auf Bestellung 375 Stücke: Lieferzeit 10-14 Tag (e) |
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IPA60R099C7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 83A; 33W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ C7 Polarisation: unipolar Drain-source voltage: 650V Drain current: 8A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: THT Kind of channel: enhancement Pulsed drain current: 83A Gate charge: 42nC Kind of package: tube |
auf Bestellung 28 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IPA60R099C7XKSA1 |
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Hersteller: Infineon Technologies
Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220FP Tube
Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220FP Tube
auf Bestellung 219 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 37+ | 4.83 EUR |
| 50+ | 4.68 EUR |
| 100+ | 4.25 EUR |
| IPA60R099C7XKSA1 |
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Hersteller: Infineon Technologies
Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220FP Tube
Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220FP Tube
auf Bestellung 220 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 37+ | 4.83 EUR |
| 50+ | 4.57 EUR |
| 100+ | 4.09 EUR |
| IPA60R099C7XKSA1 |
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Hersteller: Infineon Technologies
Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220FP Tube
Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220FP Tube
auf Bestellung 170 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 18+ | 9.96 EUR |
| 20+ | 8.89 EUR |
| 100+ | 7.24 EUR |
| IPA60R099C7XKSA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220FP Tube
Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220FP Tube
auf Bestellung 468 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 18+ | 10.03 EUR |
| 21+ | 8.26 EUR |
| 25+ | 7.56 EUR |
| 100+ | 6.3 EUR |
| 250+ | 6.1 EUR |
| IPA60R099C7XKSA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 12A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 490µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1819 pF @ 400 V
Description: MOSFET N-CH 600V 12A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 490µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1819 pF @ 400 V
auf Bestellung 540 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 11.82 EUR |
| 10+ | 7.93 EUR |
| 50+ | 6.26 EUR |
| 100+ | 5.72 EUR |
| 500+ | 4.78 EUR |
| IPA60R099C7XKSA1 |
|
Hersteller: Infineon Technologies
MOSFETs HIGH POWER_NEW
MOSFETs HIGH POWER_NEW
auf Bestellung 375 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 11.88 EUR |
| 10+ | 6.28 EUR |
| 100+ | 5.76 EUR |
| 500+ | 4.96 EUR |
| IPA60R099C7XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 83A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 83A
Gate charge: 42nC
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 83A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 83A
Gate charge: 42nC
Kind of package: tube
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)