Technische Details IPA60R125CFD7XKSA1 Infineon Technologies
Description: MOSFET N-CH 600V 11A TO220, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V, Power Dissipation (Max): 32W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 390µA, Supplier Device Package: PG-TO220 Full Pack, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1503 pF @ 400 V.
Weitere Produktangebote IPA60R125CFD7XKSA1 nach Preis ab 2.73 EUR bis 7.34 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IPA60R125CFD7XKSA1 | Infineon Technologies |
 Description: MOSFET N-CH 600V 11A TO220Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V Power Dissipation (Max): 32W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 390µA Supplier Device Package: PG-TO220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1503 pF @ 400 V |
auf Bestellung 572 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
 |
IPA60R125CFD7XKSA1 | Infineon Technologies |
MOSFETs HIGH POWER_NEW |
auf Bestellung 688 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IPA60R125CFD7XKSA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 11A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 390µA
Supplier Device Package: PG-TO220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1503 pF @ 400 V
Description: MOSFET N-CH 600V 11A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 390µA
Supplier Device Package: PG-TO220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1503 pF @ 400 V
auf Bestellung 572 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 7.27 EUR |
| 50+ | 3.74 EUR |
| 100+ | 3.4 EUR |
| 500+ | 2.8 EUR |
| IPA60R125CFD7XKSA1 |
|
Hersteller: Infineon Technologies
MOSFETs HIGH POWER_NEW
MOSFETs HIGH POWER_NEW
auf Bestellung 688 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 7.34 EUR |
| 10+ | 4.8 EUR |
| 100+ | 3.75 EUR |
| 500+ | 3.13 EUR |
| 1000+ | 2.9 EUR |
| 2500+ | 2.73 EUR |