IPA60R190C6 Infineon Technologies
auf Bestellung 210 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.4 EUR |
| 10+ | 3.85 EUR |
| 25+ | 3.48 EUR |
| 100+ | 2.97 EUR |
| 250+ | 2.85 EUR |
| 500+ | 2.41 EUR |
| 1000+ | 2.32 EUR |
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Technische Details IPA60R190C6 Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR, 2, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V, Power Dissipation (Max): 34W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 630µA, Supplier Device Package: PG-TO220-3-111, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V.
Weitere Produktangebote IPA60R190C6 nach Preis ab 7.84 EUR bis 7.84 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| IPA60R190C6 | Hersteller : Infineon |
 N-MOSFET 20,2A 650V 151W 0.19Ω IPA60R190C6XKSA1 IPA60R190C6 TIPA60r190c6Anzahl je Verpackung: 10 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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IPA60R190C6 Produktcode: 170681
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IPA60R190C6 | Hersteller : Infineon Technologies |
Description: POWER FIELD-EFFECT TRANSISTOR, 2 Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V Power Dissipation (Max): 34W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 630µA Supplier Device Package: PG-TO220-3-111 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V |
Produkt ist nicht verfügbar |