IPA60R280E6 Infineon Technologies

Description: 600V 0.28OHM N-CHANNEL MOSFET, Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PG-TO220-3-111, Vgs(th) (Max) @ Id: 3.5V @ 430µA, Power Dissipation (Max): 32W (Tc), Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ).