Technische Details IPA60R360P7SE8228XKSA1 Infineon Technologies
Description: MOSFET N-CH 600V 9A TO220, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V, Power Dissipation (Max): 22W (Tc), Vgs(th) (Max) @ Id: 4V @ 140µA, Supplier Device Package: PG-TO220-FP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V.
Weitere Produktangebote IPA60R360P7SE8228XKSA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IPA60R360P7SE8228XKSA1 | Infineon Technologies |
 Description: MOSFET N-CH 600V 9A TO220Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V Power Dissipation (Max): 22W (Tc) Vgs(th) (Max) @ Id: 4V @ 140µA Supplier Device Package: PG-TO220-FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IPA60R360P7SE8228XKSA1 | Infineon Technologies |
MOSFETs CONSUMER |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
IPA60R360P7SE8228XKSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: N-MOSFET; 600V; 9A; 22W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Drain-source voltage: 600V Drain current: 9A Power dissipation: 22W Case: TO220FP Gate-source voltage: 20V Mounting: THT Kind of channel: enhancement Gate charge: 13nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IPA60R360P7SE8228XKSA1 | Infineon Technologies |
600V Cool MOS P7 Power Transistor |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IPA60R360P7SE8228XKSA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 9A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
Description: MOSFET N-CH 600V 9A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPA60R360P7SE8228XKSA1 |
|
Hersteller: Infineon Technologies
MOSFETs CONSUMER
MOSFETs CONSUMER
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPA60R360P7SE8228XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: N-MOSFET; 600V; 9A; 22W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 22W
Case: TO220FP
Gate-source voltage: 20V
Mounting: THT
Kind of channel: enhancement
Gate charge: 13nC
Category: NPN SMD transistors
Description: Transistor: N-MOSFET; 600V; 9A; 22W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 22W
Case: TO220FP
Gate-source voltage: 20V
Mounting: THT
Kind of channel: enhancement
Gate charge: 13nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPA60R360P7SE8228XKSA1 |
|
Hersteller: Infineon Technologies
600V Cool MOS P7 Power Transistor
600V Cool MOS P7 Power Transistor
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen
Stück im Wert von UAH