IPA60R380C6 Infineon Technologies


Infineon_IPA60R380C6_DataSheet_v02_04_EN.pdf
Hersteller: Infineon Technologies
MOSFETs N-Ch 600V 10.6A TO220FP-3 CoolMOS C6
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Technische Details IPA60R380C6 Infineon Technologies

Description: 600V COOLMOS POWER TRANSISTOR, Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PG-TO220-3-111, Vgs(th) (Max) @ Id: 3.5V @ 320µA, Power Dissipation (Max): 31W (Tc), Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V, Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Bulk.

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IPA60R380C6 Infineon Technologies INFN-S-A0004583381-1.pdf?t.download=true&u=5oefqw Description: 600V COOLMOS POWER TRANSISTOR
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-111
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Power Dissipation (Max): 31W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPA60R380C6 INFN-S-A0004583381-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: 600V COOLMOS POWER TRANSISTOR
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-111
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Power Dissipation (Max): 31W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH