IPA60R380E6XKSA1 Infineon Technologies
| Anzahl | Privatkunde |
|---|---|
| 72+ | 2.4 EUR |
| 86+ | 1.93 EUR |
| 99+ | 1.62 EUR |
| 106+ | 1.46 EUR |
| 500+ | 1.23 EUR |
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Lieferzeit:
14-21 Tag (e)
Mindestmenge:
72 Stücke
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Produktbewertung abgeben
Technische Details IPA60R380E6XKSA1 Infineon Technologies
Description: MOSFET N-CH 600V 10.6A TO220-FP, Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Not For New Designs, Supplier Device Package: PG-TO220-FP, Vgs(th) (Max) @ Id: 3.5V @ 320µA, Power Dissipation (Max): 31W (Tc), Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V, Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.
Weitere Produktangebote IPA60R380E6XKSA1 nach Preis ab 1.56 EUR bis 4.94 EUR
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IPA60R380E6XKSA1 | Infineon Technologies |
 Trans MOSFET N-CH 650V 10.6A 3-Pin(3+Tab) TO-220FP Tube |
auf Bestellung 496 Stücke: Lieferzeit 14-21 Tag (e) |
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IPA60R380E6XKSA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 10.6A TO220-FP Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Not For New Designs Supplier Device Package: PG-TO220-FP Vgs(th) (Max) @ Id: 3.5V @ 320µA Power Dissipation (Max): 31W (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IPA60R380E6XKSA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 650V 10.6A 3-Pin(3+Tab) TO-220FP Tube
Trans MOSFET N-CH 650V 10.6A 3-Pin(3+Tab) TO-220FP Tube
auf Bestellung 496 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 71+ | 2.44 EUR |
| 85+ | 2 EUR |
| 98+ | 1.7 EUR |
| 104+ | 1.56 EUR |
| IPA60R380E6XKSA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 10.6A TO220-FP
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Power Dissipation (Max): 31W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 600V 10.6A TO220-FP
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Power Dissipation (Max): 31W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.94 EUR |
| 10+ | 3.19 EUR |
| 50+ | 2.43 EUR |
| 100+ | 2.19 EUR |
| 500+ | 1.76 EUR |