
IPA60R600CPXKSA1 Infineon Technologies
auf Bestellung 8500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
---|---|
499+ | 1.07 EUR |
521+ | 0.99 EUR |
1000+ | 0.9 EUR |
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Technische Details IPA60R600CPXKSA1 Infineon Technologies
Description: IPA60R600 - 600V COOLMOS N-CHANN, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc), Rds On (Max) @ Id, Vgs: 600mOhm @ 3.3A, 10V, Power Dissipation (Max): 28W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 220µA, Supplier Device Package: PG-TO220-3-31, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 100 V.
Weitere Produktangebote IPA60R600CPXKSA1 nach Preis ab 1.09 EUR bis 1.09 EUR
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IPA60R600CPXKSA1 | Hersteller : Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3.3A, 10V Power Dissipation (Max): 28W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 220µA Supplier Device Package: PG-TO220-3-31 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 100 V |
auf Bestellung 8500 Stücke: Lieferzeit 10-14 Tag (e) |
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IPA60R600CPXKSA1 | Hersteller : ROCHESTER ELECTRONICS |
![]() euEccn: TBC hazardous: false productTraceability: Yes-Date/Lot Code usEccn: TBC SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 8500 Stücke: Lieferzeit 14-21 Tag (e) |
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IPA60R600CPXKSA1 | Hersteller : Infineon Technologies |
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Produkt ist nicht verfügbar |