IPA65R280E6XKSA1 Infineon Technologies
| Anzahl | Privatkunde |
|---|---|
| 215+ | 3.12 EUR |
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Technische Details IPA65R280E6XKSA1 Infineon Technologies
Description: MOSFET N-CH 650V 13.8A TO220-FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc), Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V, Power Dissipation (Max): 32W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 440µA, Supplier Device Package: PG-TO220-FP, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V.
Weitere Produktangebote IPA65R280E6XKSA1 nach Preis ab 2.49 EUR bis 6.39 EUR
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IPA65R280E6XKSA1 | Infineon Technologies |
 Trans MOSFET N-CH 650V 13.8A 3-Pin(3+Tab) TO-220FP Tube |
auf Bestellung 150 Stücke: Lieferzeit 14-21 Tag (e) |
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IPA65R280E6XKSA1 | Infineon Technologies |
Trans MOSFET N-CH 650V 13.8A 3-Pin(3+Tab) TO-220FP Tube |
auf Bestellung 150 Stücke: Lieferzeit 14-21 Tag (e) |
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IPA65R280E6XKSA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 13.8A TO220-FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V Power Dissipation (Max): 32W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 440µA Supplier Device Package: PG-TO220-FP Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V |
auf Bestellung 158 Stücke: Lieferzeit 10-14 Tag (e) |
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IPA65R280E6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 32W; TO220FP Mounting: THT Power dissipation: 32W Polarisation: unipolar Technology: CoolMOS™ Drain current: 13.8A Kind of channel: enhancement Drain-source voltage: 650V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO220FP On-state resistance: 0.28Ω |
auf Bestellung 84 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IPA65R280E6XKSA1 |
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Hersteller: Infineon Technologies
Trans MOSFET N-CH 650V 13.8A 3-Pin(3+Tab) TO-220FP Tube
Trans MOSFET N-CH 650V 13.8A 3-Pin(3+Tab) TO-220FP Tube
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 29+ | 6.14 EUR |
| 45+ | 3.96 EUR |
| 58+ | 2.96 EUR |
| 100+ | 2.59 EUR |
| IPA65R280E6XKSA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 650V 13.8A 3-Pin(3+Tab) TO-220FP Tube
Trans MOSFET N-CH 650V 13.8A 3-Pin(3+Tab) TO-220FP Tube
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 29+ | 6.22 EUR |
| 44+ | 3.93 EUR |
| 58+ | 2.89 EUR |
| 100+ | 2.49 EUR |
| IPA65R280E6XKSA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 13.8A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO220-FP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Description: MOSFET N-CH 650V 13.8A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO220-FP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
auf Bestellung 158 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.39 EUR |
| 10+ | 4.16 EUR |
| 50+ | 3.2 EUR |
| 100+ | 2.89 EUR |
| IPA65R280E6XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 32W; TO220FP
Mounting: THT
Power dissipation: 32W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 13.8A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220FP
On-state resistance: 0.28Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 32W; TO220FP
Mounting: THT
Power dissipation: 32W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 13.8A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220FP
On-state resistance: 0.28Ω
auf Bestellung 84 Stücke:
Lieferzeit 14-21 Tag (e)