Technische Details IPA65R280E6XKSA1 Infineon Technologies
Description: MOSFET N-CH 650V 13.8A TO220-FP, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Not For New Designs, Supplier Device Package: PG-TO220-FP, Vgs(th) (Max) @ Id: 3.5V @ 440µA, Power Dissipation (Max): 32W (Tc), Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V.
Weitere Produktangebote IPA65R280E6XKSA1 nach Preis ab 2.02 EUR bis 6.1 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IPA65R280E6XKSA1 | INFINEON TECHNOLOGIES |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 32W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 13.8A Power dissipation: 32W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 94 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||
 |
IPA65R280E6XKSA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 13.8A TO220-FP Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Not For New Designs Supplier Device Package: PG-TO220-FP Vgs(th) (Max) @ Id: 3.5V @ 440µA Power Dissipation (Max): 32W (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Drain to Source Voltage (Vdss): 650 V |
auf Bestellung 674 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||
 |
IPA65R280E6XKSA1 | Infineon Technologies |
Trans MOSFET N-CH 650V 13.8A 3-Pin(3+Tab) TO-220FP Tube |
auf Bestellung 150 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||
|
|
IPA65R280E6XKSA1 | Infineon Technologies |
Trans MOSFET N-CH 650V 13.8A 3-Pin(3+Tab) TO-220FP Tube |
auf Bestellung 150 Stücke: Lieferzeit 14-21 Tag (e) |
|
| IPA65R280E6XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 94 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 4.47 EUR |
| 50+ | 2.31 EUR |
| IPA65R280E6XKSA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 13.8A TO220-FP
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Power Dissipation (Max): 32W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Description: MOSFET N-CH 650V 13.8A TO220-FP
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Power Dissipation (Max): 32W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
auf Bestellung 674 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.53 EUR |
| 50+ | 2.76 EUR |
| 100+ | 2.5 EUR |
| 500+ | 2.02 EUR |
| IPA65R280E6XKSA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 650V 13.8A 3-Pin(3+Tab) TO-220FP Tube
Trans MOSFET N-CH 650V 13.8A 3-Pin(3+Tab) TO-220FP Tube
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 29+ | 6.08 EUR |
| 58+ | 3.03 EUR |
| 100+ | 2.65 EUR |
| IPA65R280E6XKSA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 650V 13.8A 3-Pin(3+Tab) TO-220FP Tube
Trans MOSFET N-CH 650V 13.8A 3-Pin(3+Tab) TO-220FP Tube
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 29+ | 6.1 EUR |
| 57+ | 2.98 EUR |
| 100+ | 2.57 EUR |