IPA65R600E6 Infineon Technologies
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.61 EUR |
| 10+ | 2.51 EUR |
| 100+ | 1.82 EUR |
| 500+ | 1.44 EUR |
| 1000+ | 1.43 EUR |
| 2500+ | 1.38 EUR |
| 5000+ | 1.33 EUR |
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Technische Details IPA65R600E6 Infineon Technologies
Description: IPA65R600 - 650V AND 700V COOLMO, Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Bulk, Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PG-TO220-3-111, Vgs(th) (Max) @ Id: 3.5V @ 210µA, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±20V, Power Dissipation (Max): 28W (Tc), Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V.
Weitere Produktangebote IPA65R600E6
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| IPA65R600E6 | Infineon Technologies |
 Description: IPA65R600 - 650V AND 700V COOLMOMounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Bulk Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TO220-3-111 Vgs(th) (Max) @ Id: 3.5V @ 210µA Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Power Dissipation (Max): 28W (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IPA65R600E6 |
|
Hersteller: Infineon Technologies
Description: IPA65R600 - 650V AND 700V COOLMO
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-3-111
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Power Dissipation (Max): 28W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Description: IPA65R600 - 650V AND 700V COOLMO
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-3-111
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Power Dissipation (Max): 28W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH