IPA90R500C3XKSA2 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 50+ | 2.94 EUR |
| 51+ | 2.8 EUR |
| 100+ | 2.47 EUR |
| 500+ | 2.07 EUR |
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Technische Details IPA90R500C3XKSA2 Infineon Technologies
Description: MOSFET N-CH 900V 11A TO220, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V, Power Dissipation (Max): 34W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 740µA, Supplier Device Package: PG-TO220-FP, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 100 V.
Weitere Produktangebote IPA90R500C3XKSA2 nach Preis ab 2.19 EUR bis 7.9 EUR
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IPA90R500C3XKSA2 | Infineon Technologies |
 Trans MOSFET N-CH 900V 11A 3-Pin(3+Tab) TO-220FP Tube |
auf Bestellung 950 Stücke: Lieferzeit 14-21 Tag (e) |
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IPA90R500C3XKSA2 | Infineon Technologies |
MOSFETs LOW POWER_LEGACY |
auf Bestellung 478 Stücke: Lieferzeit 10-14 Tag (e) |
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IPA90R500C3XKSA2 | Infineon Technologies |
Description: MOSFET N-CH 900V 11A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V Power Dissipation (Max): 34W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 740µA Supplier Device Package: PG-TO220-FP Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 100 V |
auf Bestellung 586 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IPA90R500C3XKSA2 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 900V 11A 3-Pin(3+Tab) TO-220FP Tube
Trans MOSFET N-CH 900V 11A 3-Pin(3+Tab) TO-220FP Tube
auf Bestellung 950 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 50+ | 2.94 EUR |
| 51+ | 2.87 EUR |
| 100+ | 2.57 EUR |
| 500+ | 2.19 EUR |
| IPA90R500C3XKSA2 |
|
Hersteller: Infineon Technologies
MOSFETs LOW POWER_LEGACY
MOSFETs LOW POWER_LEGACY
auf Bestellung 478 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 6.56 EUR |
| 10+ | 3.36 EUR |
| 100+ | 3.04 EUR |
| 500+ | 2.48 EUR |
| 1000+ | 2.39 EUR |
| IPA90R500C3XKSA2 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 900V 11A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 740µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 100 V
Description: MOSFET N-CH 900V 11A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 740µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 100 V
auf Bestellung 586 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 7.9 EUR |
| 50+ | 4.04 EUR |
| 100+ | 3.66 EUR |
| 500+ | 3.01 EUR |