| Anzahl | Preis |
|---|---|
| 1+ | 4.52 EUR |
| 10+ | 2.24 EUR |
| 100+ | 2.02 EUR |
| 500+ | 1.59 EUR |
| 1000+ | 1.45 EUR |
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Technische Details IPA90R800C3XKSA2 Infineon Technologies
Description: MOSFET N-CH 900V 6.9A TO220, Rds On (Max) @ Id, Vgs: 800mOhm @ 4.1A, 10V, Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V, Drain to Source Voltage (Vdss): 900 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PG-TO220-FP, Vgs(th) (Max) @ Id: 3.5V @ 460µA, Power Dissipation (Max): 33W (Tc).
Weitere Produktangebote IPA90R800C3XKSA2 nach Preis ab 2.43 EUR bis 5.44 EUR
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IPA90R800C3XKSA2 | Infineon Technologies |
 Description: MOSFET N-CH 900V 6.9A TO220Rds On (Max) @ Id, Vgs: 800mOhm @ 4.1A, 10V Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Drain to Source Voltage (Vdss): 900 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO220-FP Vgs(th) (Max) @ Id: 3.5V @ 460µA Power Dissipation (Max): 33W (Tc) |
auf Bestellung 191 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPA90R800C3XKSA2 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 900V 6.9A TO220
Rds On (Max) @ Id, Vgs: 800mOhm @ 4.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 3.5V @ 460µA
Power Dissipation (Max): 33W (Tc)
Description: MOSFET N-CH 900V 6.9A TO220
Rds On (Max) @ Id, Vgs: 800mOhm @ 4.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 3.5V @ 460µA
Power Dissipation (Max): 33W (Tc)
auf Bestellung 191 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 5.44 EUR |
| 50+ | 2.7 EUR |
| 100+ | 2.43 EUR |