IPA95R1K2P7 Infineon Technologies
| Anzahl | Privatkunde |
|---|---|
| 62+ | 2.9 EUR |
| 100+ | 2.73 EUR |
| 250+ | 2.56 EUR |
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Technische Details IPA95R1K2P7 Infineon Technologies
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 950V; 3.7A; 27W; TO220FP; ESD, Type of transistor: N-MOSFET, Technology: CoolMOS™ P7, Polarisation: unipolar, Drain-source voltage: 950V, Drain current: 3.7A, Power dissipation: 27W, Case: TO220FP, Gate-source voltage: ±20V, On-state resistance: 1.2Ω, Mounting: THT, Gate charge: 15nC, Kind of package: tube, Kind of channel: enhancement, Version: ESD.
Weitere Produktangebote IPA95R1K2P7
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IPA95R1K2P7XKSA1 | INFINEON TECHNOLOGIES |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 950V; 3.7A; 27W; TO220FP; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 950V Drain current: 3.7A Power dissipation: 27W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: THT Gate charge: 15nC Kind of package: tube Kind of channel: enhancement Version: ESD |
auf Bestellung 79 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IPA95R1K2P7XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 3.7A; 27W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 3.7A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 3.7A; 27W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 3.7A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 79 Stücke:
Lieferzeit 14-21 Tag (e)