Technische Details IPA95R1K2P7XKSA1 Infineon Technologies
Description: INFINEON - IPA95R1K2P7XKSA1 - Leistungs-MOSFET, n-Kanal, 950 V, 6 A, 1.03 ohm, TO-220FP, Durchsteckmontage, tariffCode: 85412900, Transistormontage: Durchsteckmontage, Drain-Source-Spannung Vds: 950V, rohsCompliant: YES, Dauer-Drainstrom Id: 6A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, MSL: -, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 3V, euEccn: NLR, Verlustleistung: 27W, Bauform - Transistor: TO-220FP, Anzahl der Pins: 3Pin(s), Produktpalette: CoolMOS P7, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 1.03ohm, SVHC: No SVHC (25-Jun-2025).
Weitere Produktangebote IPA95R1K2P7XKSA1 nach Preis ab 0.92 EUR bis 3.47 EUR
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IPA95R1K2P7XKSA1 | INFINEON TECHNOLOGIES |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 950V; 3.7A; 27W; TO220FP; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 950V Drain current: 3.7A Power dissipation: 27W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: THT Gate charge: 15nC Kind of package: tube Kind of channel: enhancement Version: ESD |
auf Bestellung 84 Stücke: Lieferzeit 14-21 Tag (e) |
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IPA95R1K2P7XKSA1 | Infineon Technologies |
Description: MOSFET N-CH 950V 6A TO220 Input Capacitance (Ciss) (Max) @ Vds: 478 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Drain to Source Voltage (Vdss): 950 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO220-FP Vgs(th) (Max) @ Id: 3.5V @ 140µA Power Dissipation (Max): 27W (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.7A, 10V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
auf Bestellung 3625 Stücke: Lieferzeit 10-14 Tag (e) |
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IPA95R1K2P7XKSA1 | Infineon Technologies |
MOSFETs LOW POWER_NEW |
auf Bestellung 948 Stücke: Lieferzeit 10-14 Tag (e) |
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IPA95R1K2P7XKSA1 | INFINEON |
Description: INFINEON - IPA95R1K2P7XKSA1 - Leistungs-MOSFET, n-Kanal, 950 V, 6 A, 1.03 ohm, TO-220FP, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 950V rohsCompliant: YES Dauer-Drainstrom Id: 6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 27W Bauform - Transistor: TO-220FP Anzahl der Pins: 3Pin(s) Produktpalette: CoolMOS P7 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1.03ohm SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 529 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 3.7A; 27W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 3.7A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 3.7A; 27W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 3.7A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 84 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 36+ | 2.03 EUR |
| 60+ | 1.2 EUR |
| 71+ | 1.02 EUR |
| IPA95R1K2P7XKSA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 950V 6A TO220
Input Capacitance (Ciss) (Max) @ Vds: 478 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 950 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 3.5V @ 140µA
Power Dissipation (Max): 27W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 950V 6A TO220
Input Capacitance (Ciss) (Max) @ Vds: 478 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 950 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 3.5V @ 140µA
Power Dissipation (Max): 27W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 3625 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 3.17 EUR |
| 50+ | 1.48 EUR |
| 100+ | 1.37 EUR |
| 500+ | 1.12 EUR |
| 1000+ | 0.97 EUR |
| 2000+ | 0.92 EUR |
| IPA95R1K2P7XKSA1 |
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Hersteller: Infineon Technologies
MOSFETs LOW POWER_NEW
MOSFETs LOW POWER_NEW
auf Bestellung 948 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.47 EUR |
| 10+ | 1.68 EUR |
| 100+ | 1.5 EUR |
| 500+ | 1.2 EUR |
| 1000+ | 1.02 EUR |
| 5000+ | 1 EUR |
| IPA95R1K2P7XKSA1 |
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Hersteller: INFINEON
Description: INFINEON - IPA95R1K2P7XKSA1 - Leistungs-MOSFET, n-Kanal, 950 V, 6 A, 1.03 ohm, TO-220FP, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 950V
rohsCompliant: YES
Dauer-Drainstrom Id: 6A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 27W
Bauform - Transistor: TO-220FP
Anzahl der Pins: 3Pin(s)
Produktpalette: CoolMOS P7
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 1.03ohm
SVHC: No SVHC (25-Jun-2025)
Description: INFINEON - IPA95R1K2P7XKSA1 - Leistungs-MOSFET, n-Kanal, 950 V, 6 A, 1.03 ohm, TO-220FP, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 950V
rohsCompliant: YES
Dauer-Drainstrom Id: 6A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 27W
Bauform - Transistor: TO-220FP
Anzahl der Pins: 3Pin(s)
Produktpalette: CoolMOS P7
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 1.03ohm
SVHC: No SVHC (25-Jun-2025)
auf Bestellung 529 Stücke:
Lieferzeit 14-21 Tag (e)