Technische Details IPAN60R210PFD7SXKSA1 Infineon Technologies
Description: MOSFET N-CH 650V 16A TO220, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Rds On (Max) @ Id, Vgs: 210mOhm @ 4.9A, 10V, Power Dissipation (Max): 25W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 240µA, Supplier Device Package: PG-TO220-FP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V.
Weitere Produktangebote IPAN60R210PFD7SXKSA1 nach Preis ab 1.64 EUR bis 5.4 EUR
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IPAN60R210PFD7SXKSA1 | Infineon Technologies |
 Trans MOSFET N-CH 600V 16A 3-Pin(3+Tab) TO-220FP Tube |
auf Bestellung 320 Stücke: Lieferzeit 14-21 Tag (e) |
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IPAN60R210PFD7SXKSA1 | INFINEON |
Description: INFINEON - IPAN60R210PFD7SXKSA1 - Leistungs-MOSFET, n-Kanal, 600 V, 16 A, 0.171 ohm, TO-220FP, Durchsteckmontage Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 600 Dauer-Drainstrom Id: 16 Rds(on)-Messspannung Vgs: 10 Verlustleistung Pd: 25 Bauform - Transistor: TO-220FP Anzahl der Pins: 3 Produktpalette: CoolMOS PFD7 SJ Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 0.171 Betriebstemperatur, max.: 150 Schwellenspannung Vgs: 4 SVHC: No SVHC (08-Jul-2021) |
auf Bestellung 95 Stücke: Lieferzeit 14-21 Tag (e) |
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IPAN60R210PFD7SXKSA1 | Infineon Technologies |
MOSFETs CONSUMER |
auf Bestellung 710 Stücke: Lieferzeit 10-14 Tag (e) |
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IPAN60R210PFD7SXKSA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 16A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 210mOhm @ 4.9A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 240µA Supplier Device Package: PG-TO220-FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V |
auf Bestellung 747 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPAN60R210PFD7SXKSA1 |
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Hersteller: Infineon Technologies
Trans MOSFET N-CH 600V 16A 3-Pin(3+Tab) TO-220FP Tube
Trans MOSFET N-CH 600V 16A 3-Pin(3+Tab) TO-220FP Tube
auf Bestellung 320 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 55+ | 3.24 EUR |
| 79+ | 2.2 EUR |
| 100+ | 1.9 EUR |
| 200+ | 1.64 EUR |
| IPAN60R210PFD7SXKSA1 |
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Hersteller: INFINEON
Description: INFINEON - IPAN60R210PFD7SXKSA1 - Leistungs-MOSFET, n-Kanal, 600 V, 16 A, 0.171 ohm, TO-220FP, Durchsteckmontage
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 600
Dauer-Drainstrom Id: 16
Rds(on)-Messspannung Vgs: 10
Verlustleistung Pd: 25
Bauform - Transistor: TO-220FP
Anzahl der Pins: 3
Produktpalette: CoolMOS PFD7 SJ
Wandlerpolarität: n-Kanal
Betriebswiderstand, Rds(on): 0.171
Betriebstemperatur, max.: 150
Schwellenspannung Vgs: 4
SVHC: No SVHC (08-Jul-2021)
Description: INFINEON - IPAN60R210PFD7SXKSA1 - Leistungs-MOSFET, n-Kanal, 600 V, 16 A, 0.171 ohm, TO-220FP, Durchsteckmontage
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 600
Dauer-Drainstrom Id: 16
Rds(on)-Messspannung Vgs: 10
Verlustleistung Pd: 25
Bauform - Transistor: TO-220FP
Anzahl der Pins: 3
Produktpalette: CoolMOS PFD7 SJ
Wandlerpolarität: n-Kanal
Betriebswiderstand, Rds(on): 0.171
Betriebstemperatur, max.: 150
Schwellenspannung Vgs: 4
SVHC: No SVHC (08-Jul-2021)
auf Bestellung 95 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 50+ | 5.02 EUR |
| 56+ | 4.2 EUR |
| IPAN60R210PFD7SXKSA1 |
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Hersteller: Infineon Technologies
MOSFETs CONSUMER
MOSFETs CONSUMER
auf Bestellung 710 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.34 EUR |
| 10+ | 3.44 EUR |
| 100+ | 2.37 EUR |
| 500+ | 1.93 EUR |
| 1000+ | 1.78 EUR |
| 2500+ | 1.73 EUR |
| 5000+ | 1.68 EUR |
| IPAN60R210PFD7SXKSA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 16A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 4.9A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 240µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V
Description: MOSFET N-CH 650V 16A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 4.9A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 240µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V
auf Bestellung 747 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.4 EUR |
| 50+ | 2.67 EUR |
| 100+ | 2.39 EUR |
| 500+ | 1.93 EUR |