| Anzahl | Preis |
|---|---|
| 2+ | 2.36 EUR |
| 10+ | 1.95 EUR |
| 100+ | 1.5 EUR |
| 500+ | 1.31 EUR |
| 1000+ | 1.07 EUR |
| 2500+ | 1 EUR |
| 5000+ | 0.96 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IPAN60R280P7SXKSA1 Infineon Technologies
Description: MOSFET N-CH 650V 12A TO220, Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Not For New Designs, Supplier Device Package: PG-TO220 Full Pack, Vgs(th) (Max) @ Id: 4V @ 190µA, Power Dissipation (Max): 24W (Tc), Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.
Weitere Produktangebote IPAN60R280P7SXKSA1 nach Preis ab 1.37 EUR bis 3.15 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IPAN60R280P7SXKSA1 | Infineon Technologies |
 Description: MOSFET N-CH 650V 12A TO220Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Not For New Designs Supplier Device Package: PG-TO220 Full Pack Vgs(th) (Max) @ Id: 4V @ 190µA Power Dissipation (Max): 24W (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
auf Bestellung 350 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IPAN60R280P7SXKSA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 12A TO220
Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TO220 Full Pack
Vgs(th) (Max) @ Id: 4V @ 190µA
Power Dissipation (Max): 24W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 650V 12A TO220
Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TO220 Full Pack
Vgs(th) (Max) @ Id: 4V @ 190µA
Power Dissipation (Max): 24W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 350 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 3.15 EUR |
| 50+ | 1.53 EUR |
| 100+ | 1.37 EUR |