| Anzahl | Preis |
|---|---|
| 2+ | 2.2 EUR |
| 10+ | 1.25 EUR |
| 100+ | 1.12 EUR |
| 500+ | 0.88 EUR |
| 1000+ | 0.72 EUR |
| 2500+ | 0.71 EUR |
| 5000+ | 0.7 EUR |
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Technische Details IPAN60R360PFD7SXKSA1 Infineon Technologies
Description: MOSFET N-CH 650V 10A TO220, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V, Power Dissipation (Max): 23W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 140µA, Supplier Device Package: PG-TO220-FP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 534 pF @ 400 V.
Weitere Produktangebote IPAN60R360PFD7SXKSA1 nach Preis ab 0.9 EUR bis 2.68 EUR
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IPAN60R360PFD7SXKSA1 | Infineon Technologies |
 Description: MOSFET N-CH 650V 10A TO220Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V Power Dissipation (Max): 23W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 140µA Supplier Device Package: PG-TO220-FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 534 pF @ 400 V |
auf Bestellung 506 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPAN60R360PFD7SXKSA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 10A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V
Power Dissipation (Max): 23W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 140µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 534 pF @ 400 V
Description: MOSFET N-CH 650V 10A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V
Power Dissipation (Max): 23W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 140µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 534 pF @ 400 V
auf Bestellung 506 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.68 EUR |
| 50+ | 1.28 EUR |
| 100+ | 1.14 EUR |
| 500+ | 0.9 EUR |