| Anzahl | Preis |
|---|---|
| 1+ | 3.43 EUR |
| 10+ | 1.57 EUR |
| 100+ | 1.31 EUR |
| 450+ | 1.15 EUR |
| 900+ | 1.02 EUR |
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Technische Details IPAW60R180P7SXKSA1 Infineon Technologies
Description: MOSFET N-CHANNEL 650V 18A TO220, Package / Case: TO-220-3 Full Pack, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Not For New Designs, Supplier Device Package: PG-TO220 Full Pack, Vgs(th) (Max) @ Id: 4V @ 280µA, Power Dissipation (Max): 26W (Tc), Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±20V.
Weitere Produktangebote IPAW60R180P7SXKSA1 nach Preis ab 1.54 EUR bis 3.63 EUR
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IPAW60R180P7SXKSA1 | Infineon Technologies |
 Description: MOSFET N-CHANNEL 650V 18A TO220Package / Case: TO-220-3 Full Pack Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Not For New Designs Supplier Device Package: PG-TO220 Full Pack Vgs(th) (Max) @ Id: 4V @ 280µA Power Dissipation (Max): 26W (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V |
auf Bestellung 310 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPAW60R180P7SXKSA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CHANNEL 650V 18A TO220
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TO220 Full Pack
Vgs(th) (Max) @ Id: 4V @ 280µA
Power Dissipation (Max): 26W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Description: MOSFET N-CHANNEL 650V 18A TO220
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TO220 Full Pack
Vgs(th) (Max) @ Id: 4V @ 280µA
Power Dissipation (Max): 26W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
auf Bestellung 310 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 3.63 EUR |
| 45+ | 1.71 EUR |
| 135+ | 1.54 EUR |