Technische Details IPAW60R180P7SXKSA1 Infineon Technologies
Description: MOSFET N-CHANNEL 650V 18A TO220, Package / Case: TO-220-3 Full Pack, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Not For New Designs, Supplier Device Package: PG-TO220 Full Pack, Vgs(th) (Max) @ Id: 4V @ 280µA, Power Dissipation (Max): 26W (Tc), Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±20V.
Weitere Produktangebote IPAW60R180P7SXKSA1 nach Preis ab 0.87 EUR bis 4.88 EUR
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IPAW60R180P7SXKSA1 | Infineon Technologies |
 Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-220FP Tube |
auf Bestellung 2978 Stücke: Lieferzeit 14-21 Tag (e) |
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IPAW60R180P7SXKSA1 | Infineon Technologies |
Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-220FP Tube |
auf Bestellung 53878 Stücke: Lieferzeit 14-21 Tag (e) |
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IPAW60R180P7SXKSA1 | Infineon Technologies |
Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-220FP Tube |
auf Bestellung 720 Stücke: Lieferzeit 14-21 Tag (e) |
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IPAW60R180P7SXKSA1 | Infineon Technologies |
Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-220FP Tube |
auf Bestellung 380 Stücke: Lieferzeit 14-21 Tag (e) |
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IPAW60R180P7SXKSA1 | Infineon Technologies |
MOSFETs CONSUMER |
auf Bestellung 899 Stücke: Lieferzeit 10-14 Tag (e) |
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IPAW60R180P7SXKSA1 | Infineon Technologies |
Description: MOSFET N-CHANNEL 650V 18A TO220 Package / Case: TO-220-3 Full Pack Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Not For New Designs Supplier Device Package: PG-TO220 Full Pack Vgs(th) (Max) @ Id: 4V @ 280µA Power Dissipation (Max): 26W (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V |
auf Bestellung 77 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPAW60R180P7SXKSA1 |
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Hersteller: Infineon Technologies
Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-220FP Tube
Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-220FP Tube
auf Bestellung 2978 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 119+ | 1.48 EUR |
| 135+ | 1.26 EUR |
| 149+ | 1.11 EUR |
| 540+ | 0.98 EUR |
| 1035+ | 0.93 EUR |
| 2025+ | 0.87 EUR |
| IPAW60R180P7SXKSA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-220FP Tube
Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-220FP Tube
auf Bestellung 53878 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 342+ | 1.93 EUR |
| 500+ | 1.71 EUR |
| 1000+ | 1.55 EUR |
| 10000+ | 1.34 EUR |
| IPAW60R180P7SXKSA1 |
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Hersteller: Infineon Technologies
Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-220FP Tube
Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-220FP Tube
auf Bestellung 720 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 77+ | 2.28 EUR |
| 102+ | 1.71 EUR |
| 114+ | 1.5 EUR |
| 450+ | 1.32 EUR |
| IPAW60R180P7SXKSA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-220FP Tube
Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-220FP Tube
auf Bestellung 380 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 50+ | 3.52 EUR |
| 53+ | 3.31 EUR |
| 111+ | 1.54 EUR |
| 200+ | 1.32 EUR |
| IPAW60R180P7SXKSA1 |
|
Hersteller: Infineon Technologies
MOSFETs CONSUMER
MOSFETs CONSUMER
auf Bestellung 899 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.8 EUR |
| 10+ | 3.09 EUR |
| 100+ | 2.18 EUR |
| 450+ | 1.83 EUR |
| 900+ | 1.63 EUR |
| 2700+ | 1.54 EUR |
| 5400+ | 1.48 EUR |
| IPAW60R180P7SXKSA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CHANNEL 650V 18A TO220
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TO220 Full Pack
Vgs(th) (Max) @ Id: 4V @ 280µA
Power Dissipation (Max): 26W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Description: MOSFET N-CHANNEL 650V 18A TO220
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TO220 Full Pack
Vgs(th) (Max) @ Id: 4V @ 280µA
Power Dissipation (Max): 26W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
auf Bestellung 77 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.88 EUR |
| 10+ | 3.14 EUR |