IPB009N03LGATMA1 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 1+ | 7.02 EUR |
| 10+ | 6.32 EUR |
| 100+ | 5.17 EUR |
| 500+ | 4.42 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IPB009N03LGATMA1 Infineon Technologies
Description: MOSFET N-CH 30V 180A TO263-7, Input Capacitance (Ciss) (Max) @ Vds: 25000 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: PG-TO263-7-3, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Power Dissipation (Max): 250W (Tc), Rds On (Max) @ Id, Vgs: 0.95mOhm @ 100A, 10V, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-7, D2PAK (6 Leads + Tab), Packaging: Tape & Reel (TR), Current - Continuous Drain (Id) @ 25°C: 180A (Tc).
Weitere Produktangebote IPB009N03LGATMA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
 |
IPB009N03LGATMA1 | Infineon Technologies |
 Description: MOSFET N-CH 30V 180A TO263-7Input Capacitance (Ciss) (Max) @ Vds: 25000 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: PG-TO263-7-3 Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 0.95mOhm @ 100A, 10V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Packaging: Tape & Reel (TR) Current - Continuous Drain (Id) @ 25°C: 180A (Tc) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
|
IPB009N03LGATMA1 | Infineon Technologies |
Description: MOSFET N-CH 30V 180A TO263-7 Input Capacitance (Ciss) (Max) @ Vds: 25000 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: PG-TO263-7-3 Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 0.95mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) FET Type: N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Packaging: Cut Tape (CT) Technology: MOSFET (Metal Oxide) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IPB009N03LGATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 180A TO263-7
Input Capacitance (Ciss) (Max) @ Vds: 25000 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO263-7-3
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 0.95mOhm @ 100A, 10V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Description: MOSFET N-CH 30V 180A TO263-7
Input Capacitance (Ciss) (Max) @ Vds: 25000 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO263-7-3
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 0.95mOhm @ 100A, 10V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPB009N03LGATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 180A TO263-7
Input Capacitance (Ciss) (Max) @ Vds: 25000 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO263-7-3
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 0.95mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Cut Tape (CT)
Technology: MOSFET (Metal Oxide)
Description: MOSFET N-CH 30V 180A TO263-7
Input Capacitance (Ciss) (Max) @ Vds: 25000 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO263-7-3
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 0.95mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Cut Tape (CT)
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH