IPB048N15N5LFATMA1 Infineon Technologies
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1000+ | 6.38 EUR |
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Technische Details IPB048N15N5LFATMA1 Infineon Technologies
Description: MOSFET N-CH 150V 120A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 4.8mOhm @ 100A, 10V, Power Dissipation (Max): 313W (Tc), Vgs(th) (Max) @ Id: 4.9V @ 255µA, Supplier Device Package: PG-TO263-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 75 V.
Weitere Produktangebote IPB048N15N5LFATMA1 nach Preis ab 6.39 EUR bis 17.75 EUR
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IPB048N15N5LFATMA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 150V 150A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB048N15N5LFATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 150V 150A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB048N15N5LFATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 150V 120A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 100A, 10V Power Dissipation (Max): 313W (Tc) Vgs(th) (Max) @ Id: 4.9V @ 255µA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 75 V |
auf Bestellung 898 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB048N15N5LFATMA1 | Hersteller : Infineon Technologies |
MOSFET TRENCH >=100V |
auf Bestellung 635 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB048N15N5LFATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 150V 150A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 1006 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB048N15N5LFATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 150V 120A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPB048N15N5LFATMA1 | Hersteller : Infineon |
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auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) |
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IPB048N15N5LFATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 150V 120A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 100A, 10V Power Dissipation (Max): 313W (Tc) Vgs(th) (Max) @ Id: 4.9V @ 255µA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 75 V |
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